Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas

L. Ryć, F. Dubecký, M. Pfeifer, B. Pura, F. Riesz, W. Slysz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Planar MSM detectors made from GaAs, including low temperature grown (LTG) MBE GaAs and InP, were fabricated and tested for fast response to 30-keV X-ray pulses and for sensitivity to shallow penetrating light from LEDs. The detectors are intended for measurement of subnanosecond X-ray pulses from hot plasmas. The devices made from InP and the most defected GaAs are the fastest and mostly promising for X-ray diagnostics. The response of LTG GaAs detector to 30-keV 15-ns X-ray pulses is rather slow.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Pages280-283
Number of pages4
Publication statusPublished - 2002
Event2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia
Duration: Jun 30 2002Jul 5 2002

Other

Other2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
CountrySlovakia
Period6/30/027/5/02

Fingerprint

Detectors
Plasmas
X rays
Lasers
Molecular beam epitaxy
Light emitting diodes
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ryć, L., Dubecký, F., Pfeifer, M., Pura, B., Riesz, F., & Slysz, W. (2002). Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 280-283)

Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas. / Ryć, L.; Dubecký, F.; Pfeifer, M.; Pura, B.; Riesz, F.; Slysz, W.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. p. 280-283.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ryć, L, Dubecký, F, Pfeifer, M, Pura, B, Riesz, F & Slysz, W 2002, Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. pp. 280-283, 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002), Slovakia, 6/30/02.
Ryć L, Dubecký F, Pfeifer M, Pura B, Riesz F, Slysz W. Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. p. 280-283
Ryć, L. ; Dubecký, F. ; Pfeifer, M. ; Pura, B. ; Riesz, F. ; Slysz, W. / Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. pp. 280-283
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