Abstract: The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.
- gas assisted process
- ion beam lithography
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics