Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB

M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov

Research output: Contribution to journalArticle

Abstract

Abstract: The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.

Original languageEnglish
Pages (from-to)2100-2102
Number of pages3
JournalSemiconductors
Volume53
Issue number16
DOIs
Publication statusPublished - Dec 1 2019

Keywords

  • FIB
  • gas assisted process
  • ion beam lithography
  • SiN/GaN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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  • Cite this

    Mitrofanov, M. I., Voznyuk, G. V., Rodin, S. N., Lundin, W. V., Evtikhiev, V. P., & Tsatsulnikov, A. F. (2019). Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB. Semiconductors, 53(16), 2100-2102. https://doi.org/10.1134/S1063782619120170