Erratum: The mechanism of defect creation and passivation at the SiC/SiO2 interface (Journal of Physics D: Applied Physics (2007) 40 (6242-6253))

Peter Deák, Jan Knaup, Christoph Thill, Thomas Frauenheim, Tamás Hornos, A. Gali

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
Article number049801
JournalJournal of Physics D: Applied Physics
Volume41
Issue number4
DOIs
Publication statusPublished - 2008

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Passivation
Physics
Defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Erratum : The mechanism of defect creation and passivation at the SiC/SiO2 interface (Journal of Physics D: Applied Physics (2007) 40 (6242-6253)). / Deák, Peter; Knaup, Jan; Thill, Christoph; Frauenheim, Thomas; Hornos, Tamás; Gali, A.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 4, 049801, 2008.

Research output: Contribution to journalArticle

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