EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC

T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzén, N. Morishita, T. Ohshima, H. Itoh, A. Gali

Research output: Contribution to journalArticle

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Abstract

Carbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been observed only in the form of positively charged states in p -type or semi-insulating SiC. Here, we present electron- paramagnetic-resonance (EPR) and photoinduced EPR (photo-EPR) observations of their negatively charged state (VC-) in n -type 4H-SiC. This EPR center (called HEI1) is characterized by an electron spin of 1 2 in a Si-Si antibonding state of VC. First-principles calculations confirm that the HEI1 center arises from VC- at hexagonal sites. The HEI1 spectrum shows a transition between C1h and C3v symmetries due to a fast reorientation effect reflected in the nature of this defect. The photo-EPR data suggest that VC 2- is the dominant form of VC when the Fermi level lies 1.1 eV below the conduction band.

Original languageEnglish
Article number193202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number19
DOIs
Publication statusPublished - 2005

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Silicon carbide
silicon carbides
Vacancies
Paramagnetic resonance
electron paramagnetic resonance
Carbon
carbon
Defects
defects
Fermi level
Conduction bands
electron spin
retraining
silicon carbide
conduction bands
Electrons
symmetry

ASJC Scopus subject areas

  • Condensed Matter Physics

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EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC. / Umeda, T.; Ishitsuka, Y.; Isoya, J.; Son, N. T.; Janzén, E.; Morishita, N.; Ohshima, T.; Itoh, H.; Gali, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 19, 193202, 2005.

Research output: Contribution to journalArticle

Umeda, T, Ishitsuka, Y, Isoya, J, Son, NT, Janzén, E, Morishita, N, Ohshima, T, Itoh, H & Gali, A 2005, 'EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC', Physical Review B - Condensed Matter and Materials Physics, vol. 71, no. 19, 193202. https://doi.org/10.1103/PhysRevB.71.193202
Umeda, T. ; Ishitsuka, Y. ; Isoya, J. ; Son, N. T. ; Janzén, E. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Gali, A. / EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 71, No. 19.
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AU - Umeda, T.

AU - Ishitsuka, Y.

AU - Isoya, J.

AU - Son, N. T.

AU - Janzén, E.

AU - Morishita, N.

AU - Ohshima, T.

AU - Itoh, H.

AU - Gali, A.

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