EPR and ab initio calculation study on the EI4 center in 4H - And 6H-SiC

P. Carlsson, N. T. Son, A. Gali, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson, E. Janzén

Research output: Contribution to journalArticle

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Abstract

We present results from electron paramagnetic resonance (EPR) studies of the EI4 EPR center in 4H - and 6H-SiC. The EPR signal of the EI4 center was found to be drastically enhanced in electron-irradiated high-purity semi-insulating materials after annealing at 700-750°C. Strong EPR signals of the EI4 center with minimal interferences from other radiation-induced defects in irradiated high-purity semi-insulating materials allowed our more detailed study of the hyperfine (hf) structures. An additional large-splitting S 29 i hf structure and C 13 hf lines of the EI4 defect were observed. Comparing the data on the hf interactions and the annealing behavior obtained from EPR experiments and from ab initio supercell calculations of different carbon-vacancy-related complexes, we suggest a complex between a carbon vacancy-carbon antisite and a carbon vacancy at the third-neighbor site of the antisite in the neutral charge state, ⊃( VC -CSi VC ⊃) 0, as a new defect model for the EI4 center.

Original languageEnglish
Article number235203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number23
DOIs
Publication statusPublished - Dec 8 2010

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Paramagnetic resonance
electron paramagnetic resonance
Carbon
Vacancies
Insulating materials
carbon
hyperfine structure
insulation
Defects
defects
purity
Annealing
annealing
interference
Radiation
Electrons
radiation
electrons
Experiments
interactions

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

EPR and ab initio calculation study on the EI4 center in 4H - And 6H-SiC. / Carlsson, P.; Son, N. T.; Gali, A.; Isoya, J.; Morishita, N.; Ohshima, T.; Magnusson, B.; Janzén, E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 23, 235203, 08.12.2010.

Research output: Contribution to journalArticle

Carlsson, P, Son, NT, Gali, A, Isoya, J, Morishita, N, Ohshima, T, Magnusson, B & Janzén, E 2010, 'EPR and ab initio calculation study on the EI4 center in 4H - And 6H-SiC', Physical Review B - Condensed Matter and Materials Physics, vol. 82, no. 23, 235203. https://doi.org/10.1103/PhysRevB.82.235203
Carlsson, P. ; Son, N. T. ; Gali, A. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Magnusson, B. ; Janzén, E. / EPR and ab initio calculation study on the EI4 center in 4H - And 6H-SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 82, No. 23.
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