Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon

I. Geröcs, G. Molnár, E. Jároli, E. Zsoldos, G. Pető, J. Gyulai, E. Bugiel

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50-nm Gd layer on 〈100〉 silicon. The epitaxy was proved by x-ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and 〈100〉 silicon substrate was found to be 4%.

Original languageEnglish
Pages (from-to)2144-2145
Number of pages2
JournalApplied Physics Letters
Volume51
Issue number25
DOIs
Publication statusPublished - 1987

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gadolinium
epitaxy
silicon
x ray diffraction
electron diffraction
vacuum
annealing
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon. / Geröcs, I.; Molnár, G.; Jároli, E.; Zsoldos, E.; Pető, G.; Gyulai, J.; Bugiel, E.

In: Applied Physics Letters, Vol. 51, No. 25, 1987, p. 2144-2145.

Research output: Contribution to journalArticle

Geröcs, I. ; Molnár, G. ; Jároli, E. ; Zsoldos, E. ; Pető, G. ; Gyulai, J. ; Bugiel, E. / Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon. In: Applied Physics Letters. 1987 ; Vol. 51, No. 25. pp. 2144-2145.
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