Abstract: Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(Formula Presented.) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(Formula Presented.) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(Formula Presented.), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.
- Raman scattering
- semipolar gallium nitride
- vapor-phase epitaxy
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)