Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate

V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. Rodin, M. P. Shcheglov

Research output: Contribution to journalArticle

Abstract

Abstract: Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(Formula Presented.) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(Formula Presented.) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(Formula Presented.), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Original languageEnglish
Pages (from-to)529-532
Number of pages4
JournalTechnical Physics Letters
Volume45
Issue number6
DOIs
Publication statusPublished - Jun 1 2019

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Keywords

  • Raman scattering
  • semipolar gallium nitride
  • vapor-phase epitaxy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S., & Shcheglov, M. P. (2019). Epitaxy of GaN(0001) and GaN(Formula Presented.) Layers on Si(100) Substrate. Technical Physics Letters, 45(6), 529-532. https://doi.org/10.1134/S106378501906004X