Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer

M. Yandouzi, L. Tóth, V. Vasudevan, M. Cannaerts, C. Van Haesendonck, D. Schryvers

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epitaxial nanoscale [001] films of NixAl100-x (x = 62.5) have been prepared by physical vapour deposition on to a thin film of Ag [001] on NaCl (001) faces with occasional hillocks. The Ag film contains numerous dislocations and stacking faults and has a rms surface roughness of 2 nm. The Ni-Al film is ordered in the B2 structure and reveals many dislocations as well as antiphase boundaries between ordered domains. The formation of subgrains in the Ni-Al film results in severe height variations up to 30 nm across the surface. A cross-sectional model for the growth of both films is presented.

Original languageEnglish
Pages (from-to)719-724
Number of pages6
JournalPhilosophical Magazine Letters
Volume80
Issue number11
DOIs
Publication statusPublished - Nov 2000

Fingerprint

Buffer layers
buffers
Thin films
thin films
antiphase boundaries
Stacking faults
Physical vapor deposition
Dislocations (crystals)
crystal defects
surface roughness
Surface roughness
vapor deposition

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Yandouzi, M., Tóth, L., Vasudevan, V., Cannaerts, M., Van Haesendonck, C., & Schryvers, D. (2000). Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer. Philosophical Magazine Letters, 80(11), 719-724. https://doi.org/10.1080/09500830050192936

Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer. / Yandouzi, M.; Tóth, L.; Vasudevan, V.; Cannaerts, M.; Van Haesendonck, C.; Schryvers, D.

In: Philosophical Magazine Letters, Vol. 80, No. 11, 11.2000, p. 719-724.

Research output: Contribution to journalArticle

Yandouzi, M, Tóth, L, Vasudevan, V, Cannaerts, M, Van Haesendonck, C & Schryvers, D 2000, 'Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer', Philosophical Magazine Letters, vol. 80, no. 11, pp. 719-724. https://doi.org/10.1080/09500830050192936
Yandouzi M, Tóth L, Vasudevan V, Cannaerts M, Van Haesendonck C, Schryvers D. Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer. Philosophical Magazine Letters. 2000 Nov;80(11):719-724. https://doi.org/10.1080/09500830050192936
Yandouzi, M. ; Tóth, L. ; Vasudevan, V. ; Cannaerts, M. ; Van Haesendonck, C. ; Schryvers, D. / Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer. In: Philosophical Magazine Letters. 2000 ; Vol. 80, No. 11. pp. 719-724.
@article{b45a7e741f7c4ed7ba71a3cec990e80c,
title = "Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer",
abstract = "Epitaxial nanoscale [001] films of NixAl100-x (x = 62.5) have been prepared by physical vapour deposition on to a thin film of Ag [001] on NaCl (001) faces with occasional hillocks. The Ag film contains numerous dislocations and stacking faults and has a rms surface roughness of 2 nm. The Ni-Al film is ordered in the B2 structure and reveals many dislocations as well as antiphase boundaries between ordered domains. The formation of subgrains in the Ni-Al film results in severe height variations up to 30 nm across the surface. A cross-sectional model for the growth of both films is presented.",
author = "M. Yandouzi and L. T{\'o}th and V. Vasudevan and M. Cannaerts and {Van Haesendonck}, C. and D. Schryvers",
year = "2000",
month = "11",
doi = "10.1080/09500830050192936",
language = "English",
volume = "80",
pages = "719--724",
journal = "Philosophical Magazine Letters",
issn = "0950-0839",
publisher = "Taylor and Francis Ltd.",
number = "11",

}

TY - JOUR

T1 - Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer

AU - Yandouzi, M.

AU - Tóth, L.

AU - Vasudevan, V.

AU - Cannaerts, M.

AU - Van Haesendonck, C.

AU - Schryvers, D.

PY - 2000/11

Y1 - 2000/11

N2 - Epitaxial nanoscale [001] films of NixAl100-x (x = 62.5) have been prepared by physical vapour deposition on to a thin film of Ag [001] on NaCl (001) faces with occasional hillocks. The Ag film contains numerous dislocations and stacking faults and has a rms surface roughness of 2 nm. The Ni-Al film is ordered in the B2 structure and reveals many dislocations as well as antiphase boundaries between ordered domains. The formation of subgrains in the Ni-Al film results in severe height variations up to 30 nm across the surface. A cross-sectional model for the growth of both films is presented.

AB - Epitaxial nanoscale [001] films of NixAl100-x (x = 62.5) have been prepared by physical vapour deposition on to a thin film of Ag [001] on NaCl (001) faces with occasional hillocks. The Ag film contains numerous dislocations and stacking faults and has a rms surface roughness of 2 nm. The Ni-Al film is ordered in the B2 structure and reveals many dislocations as well as antiphase boundaries between ordered domains. The formation of subgrains in the Ni-Al film results in severe height variations up to 30 nm across the surface. A cross-sectional model for the growth of both films is presented.

UR - http://www.scopus.com/inward/record.url?scp=0034333935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034333935&partnerID=8YFLogxK

U2 - 10.1080/09500830050192936

DO - 10.1080/09500830050192936

M3 - Article

VL - 80

SP - 719

EP - 724

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

SN - 0950-0839

IS - 11

ER -