Epitaxial lateral overgrowth of GaN on Si (111)

E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, P. Gibart, T. Riemann, J. Christen, L. Dobos, B. Pécz

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A study on epitaxial lateral overgrowth (ELO) of GaN on Si (111) was performed for ELO layer thicknesses below 3 μm. A complete coalescence was achieved for ELO of GaN on Si using a 10 μm mask period with stripes. The transmission electron microscopy and atomic force microscopy experiments were used to investigate the optical quality of the layers. An intense excitonic luminescence and a dislocation density of 5×107 cm-2 were also found.

Original languageEnglish
Pages (from-to)182-185
Number of pages4
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - Jan 1 2003


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Feltin, E., Beaumont, B., Vennéguès, P., Vaille, M., Gibart, P., Riemann, T., Christen, J., Dobos, L., & Pécz, B. (2003). Epitaxial lateral overgrowth of GaN on Si (111). Journal of Applied Physics, 93(1), 182-185. https://doi.org/10.1063/1.1516838