Epitaxial growth, structure and properties of Ni films grown on MgO(100) by d.c. bias sputter deposition

H. Qiu, A. Kosuge, H. Maruyama, M. Adamik, G. Safran, P. B. Barna, M. Hashimoto

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23 Citations (Scopus)


Ni films of 70-240 nm thickness were deposited on an MgO(100) substrate at temperatures Ts≥190°C by d.c. sputtering at 2.5 kV in pure Ar gas. A negative bias voltage Vs between zero and -110 V was applied to the substrate during the deposition. Reflection high energy electron diffraction, X-ray diffraction, cross-sectional transmission electron microscopy. Auger electron spectroscopy, ferromagnetic resonance and the measurement of the temperature coefficient of resistance were used to determine the structure and properties of the films. The degree of epitaxy of Ni increases with increasing Ts as well as increasing Vs. The optimum conditions for epitaxial growth of Ni are Ts≥280°C and Vs≥80 V. In this range epitaxial films with Ni(100) ∥ MgO(100) and Ni〈100〉 ∥ MgO〈100〉 can be prepared. A magnetic anisotropy is induced in the film plane. This anisotropy may be a result of superposition of a magnetocrystalline anisotropy originating from the epitaxial Ni film and of a uniaxial magnetic anisotropy induced during the film formation. In conclusion, as Vs ranges -80 to -110 V the bombarding effect of both energetic ions and fast neutrals of Ar will rule the epitaxial growth of the Ni film by increasing the mobility of Ni adatoms and by resputtering the impurities. This effect is pronounced at Ts≥280°C.

Original languageEnglish
Pages (from-to)9-11
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Apr 1 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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