Epitaxial growth of tungsten carbide films using C60 as carbon precursor

J. P. Palmquist, Z. Czigány, L. Hultman, U. Jansson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper we present the first results from processing and characterisation of epitaxial tungsten carbide films. The films were deposited in ultra-high vacuum by DC magnetron sputtering of tungsten with co-evaporated C60 as carbon source. It was found that the growth rate was crucial for the crystalline film quality. Epitaxial growth of β-WC1-x could be achieved at 400°C using a very low deposition rate of 6Å/min. Single-crystal films were thus formed on both MgO(100) and MgO(111). High-resolution transmission electron microscopy shows that the films grow with a very good match relative the substrate. Deposition rates of 10Å/min and higher resulted in renucleation and nanocrystalline growth with grain sizes of 15-80Å depending on substrate temperature. We have also found that a small addition of titanium stabilises the epitaxial growth of the cubic tungsten carbide films at higher growth rates. A titanium contribution of ∼2% give epitaxial growth at deposition rates of 40Å/min. X-ray diffraction study of the epitaxial films using reciprocal space mapping shows a cross-like broadening that is possibly related to ordering.

Original languageEnglish
Pages (from-to)12-17
Number of pages6
JournalJournal of Crystal Growth
Volume259
Issue number1-2
DOIs
Publication statusPublished - Nov 2003

Fingerprint

tungsten carbides
Tungsten carbide
Epitaxial growth
Carbon
carbon
Deposition rates
Titanium
titanium
Tungsten
Epitaxial films
Ultrahigh vacuum
Substrates
High resolution transmission electron microscopy
Magnetron sputtering
tungsten carbide
ultrahigh vacuum
Single crystals
magnetron sputtering
tungsten
Crystalline materials

Keywords

  • A1. Reciprocal space mapping
  • A1. X-ray diffraction
  • A3. Epitaxial growth
  • A3. Physical vapour deposition
  • B1. Ternary carbide
  • B1. Tungsten carbide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Epitaxial growth of tungsten carbide films using C60 as carbon precursor. / Palmquist, J. P.; Czigány, Z.; Hultman, L.; Jansson, U.

In: Journal of Crystal Growth, Vol. 259, No. 1-2, 11.2003, p. 12-17.

Research output: Contribution to journalArticle

Palmquist, J. P. ; Czigány, Z. ; Hultman, L. ; Jansson, U. / Epitaxial growth of tungsten carbide films using C60 as carbon precursor. In: Journal of Crystal Growth. 2003 ; Vol. 259, No. 1-2. pp. 12-17.
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