Epitaxial growth of thin silver films on water- treated NaCl surfaces

G. Sáfrán, P. Keusch, J. R. Günter, P. Barna

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Treatment of air-cleaved NaCl substrates with distilled water prior to vacuum deposition of the metal has been found to promote the epitaxial growth of continuous thin silver films (30 nm or less) at low temperatures. Well-developed (100) single-crystal silver films have been grown at a substrate temperature as low as 100°C, while randomly oriented polycrystalline films developed at 50°C or below. Changes in nucleation density of silver and cleavage step structure on NaCl due to water treatment were observed by surface decoration methods and are tentatively explained.

Original languageEnglish
Pages (from-to)331-338
Number of pages8
JournalThin Solid Films
Volume198
Issue number1-2
DOIs
Publication statusPublished - Mar 20 1991

Fingerprint

Silver
Epitaxial growth
silver
Water
water
Vacuum deposition
water treatment
vacuum deposition
Substrates
Water treatment
cleavage
Nucleation
Metals
Single crystals
nucleation
Temperature
air
single crystals
Air
metals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Epitaxial growth of thin silver films on water- treated NaCl surfaces. / Sáfrán, G.; Keusch, P.; Günter, J. R.; Barna, P.

In: Thin Solid Films, Vol. 198, No. 1-2, 20.03.1991, p. 331-338.

Research output: Contribution to journalArticle

Sáfrán, G. ; Keusch, P. ; Günter, J. R. ; Barna, P. / Epitaxial growth of thin silver films on water- treated NaCl surfaces. In: Thin Solid Films. 1991 ; Vol. 198, No. 1-2. pp. 331-338.
@article{eb3df603d198448e9ae8d68cc62e9663,
title = "Epitaxial growth of thin silver films on water- treated NaCl surfaces",
abstract = "Treatment of air-cleaved NaCl substrates with distilled water prior to vacuum deposition of the metal has been found to promote the epitaxial growth of continuous thin silver films (30 nm or less) at low temperatures. Well-developed (100) single-crystal silver films have been grown at a substrate temperature as low as 100°C, while randomly oriented polycrystalline films developed at 50°C or below. Changes in nucleation density of silver and cleavage step structure on NaCl due to water treatment were observed by surface decoration methods and are tentatively explained.",
author = "G. S{\'a}fr{\'a}n and P. Keusch and G{\"u}nter, {J. R.} and P. Barna",
year = "1991",
month = "3",
day = "20",
doi = "10.1016/0040-6090(91)90350-7",
language = "English",
volume = "198",
pages = "331--338",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Epitaxial growth of thin silver films on water- treated NaCl surfaces

AU - Sáfrán, G.

AU - Keusch, P.

AU - Günter, J. R.

AU - Barna, P.

PY - 1991/3/20

Y1 - 1991/3/20

N2 - Treatment of air-cleaved NaCl substrates with distilled water prior to vacuum deposition of the metal has been found to promote the epitaxial growth of continuous thin silver films (30 nm or less) at low temperatures. Well-developed (100) single-crystal silver films have been grown at a substrate temperature as low as 100°C, while randomly oriented polycrystalline films developed at 50°C or below. Changes in nucleation density of silver and cleavage step structure on NaCl due to water treatment were observed by surface decoration methods and are tentatively explained.

AB - Treatment of air-cleaved NaCl substrates with distilled water prior to vacuum deposition of the metal has been found to promote the epitaxial growth of continuous thin silver films (30 nm or less) at low temperatures. Well-developed (100) single-crystal silver films have been grown at a substrate temperature as low as 100°C, while randomly oriented polycrystalline films developed at 50°C or below. Changes in nucleation density of silver and cleavage step structure on NaCl due to water treatment were observed by surface decoration methods and are tentatively explained.

UR - http://www.scopus.com/inward/record.url?scp=0026117577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026117577&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(91)90350-7

DO - 10.1016/0040-6090(91)90350-7

M3 - Article

AN - SCOPUS:0026117577

VL - 198

SP - 331

EP - 338

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -