Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv

M. A. Hasan, G. Radnóczi, J. E. Sundgren

Research output: Contribution to journalArticle

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Abstract

Growth of Al on Si(100) and Si(111) in uhv was investigated using in situ RHEED, LEED and AES and ex situ TEM. The substrates were kept at room temperature during growth. Al was found to grow epitaxially on Si(100) 2 × 1 with the orientation relationship Al(110)|Si(100). TEM and RHEED showed that the Al layer has two types of (110) oriented domains that were 90° rotated with respect to each other in accordance with the following relations Al[001]|Si[011] or Si[011]. The decay in the Si AES peak-to-peak intensity indicated a deviation from a layer-by-layer growth at an Al coverage of ∼4 ML. We suggest that the Al overlayer replicates the double domain Si(100) 2 × 1 surface and thus can map the step structure on the Si surface. On Si(111) Al grew epitaxially following the relation: Al(111)|Si(111), Si[110]|Al[110] for most of the film, while a few grains grew according to the relation Al(100)|Si(111) with Al[011]|Si[110].

Original languageEnglish
Pages (from-to)1121-1123
Number of pages3
JournalVacuum
Volume41
Issue number4-6
DOIs
Publication statusPublished - 1990

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Reflection high energy electron diffraction
Epitaxial growth
Evaporation
evaporation
Transmission electron microscopy
Growth temperature
transmission electron microscopy
Substrates
deviation
decay
room temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv. / Hasan, M. A.; Radnóczi, G.; Sundgren, J. E.

In: Vacuum, Vol. 41, No. 4-6, 1990, p. 1121-1123.

Research output: Contribution to journalArticle

Hasan, M. A. ; Radnóczi, G. ; Sundgren, J. E. / Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv. In: Vacuum. 1990 ; Vol. 41, No. 4-6. pp. 1121-1123.
@article{a9bd72a8119b46f2856d331d52e500a8,
title = "Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv",
abstract = "Growth of Al on Si(100) and Si(111) in uhv was investigated using in situ RHEED, LEED and AES and ex situ TEM. The substrates were kept at room temperature during growth. Al was found to grow epitaxially on Si(100) 2 × 1 with the orientation relationship Al(110)|Si(100). TEM and RHEED showed that the Al layer has two types of (110) oriented domains that were 90° rotated with respect to each other in accordance with the following relations Al[001]|Si[011] or Si[011]. The decay in the Si AES peak-to-peak intensity indicated a deviation from a layer-by-layer growth at an Al coverage of ∼4 ML. We suggest that the Al overlayer replicates the double domain Si(100) 2 × 1 surface and thus can map the step structure on the Si surface. On Si(111) Al grew epitaxially following the relation: Al(111)|Si(111), Si[110]|Al[110] for most of the film, while a few grains grew according to the relation Al(100)|Si(111) with Al[011]|Si[110].",
author = "Hasan, {M. A.} and G. Radn{\'o}czi and Sundgren, {J. E.}",
year = "1990",
doi = "10.1016/0042-207X(90)93886-N",
language = "English",
volume = "41",
pages = "1121--1123",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "4-6",

}

TY - JOUR

T1 - Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv

AU - Hasan, M. A.

AU - Radnóczi, G.

AU - Sundgren, J. E.

PY - 1990

Y1 - 1990

N2 - Growth of Al on Si(100) and Si(111) in uhv was investigated using in situ RHEED, LEED and AES and ex situ TEM. The substrates were kept at room temperature during growth. Al was found to grow epitaxially on Si(100) 2 × 1 with the orientation relationship Al(110)|Si(100). TEM and RHEED showed that the Al layer has two types of (110) oriented domains that were 90° rotated with respect to each other in accordance with the following relations Al[001]|Si[011] or Si[011]. The decay in the Si AES peak-to-peak intensity indicated a deviation from a layer-by-layer growth at an Al coverage of ∼4 ML. We suggest that the Al overlayer replicates the double domain Si(100) 2 × 1 surface and thus can map the step structure on the Si surface. On Si(111) Al grew epitaxially following the relation: Al(111)|Si(111), Si[110]|Al[110] for most of the film, while a few grains grew according to the relation Al(100)|Si(111) with Al[011]|Si[110].

AB - Growth of Al on Si(100) and Si(111) in uhv was investigated using in situ RHEED, LEED and AES and ex situ TEM. The substrates were kept at room temperature during growth. Al was found to grow epitaxially on Si(100) 2 × 1 with the orientation relationship Al(110)|Si(100). TEM and RHEED showed that the Al layer has two types of (110) oriented domains that were 90° rotated with respect to each other in accordance with the following relations Al[001]|Si[011] or Si[011]. The decay in the Si AES peak-to-peak intensity indicated a deviation from a layer-by-layer growth at an Al coverage of ∼4 ML. We suggest that the Al overlayer replicates the double domain Si(100) 2 × 1 surface and thus can map the step structure on the Si surface. On Si(111) Al grew epitaxially following the relation: Al(111)|Si(111), Si[110]|Al[110] for most of the film, while a few grains grew according to the relation Al(100)|Si(111) with Al[011]|Si[110].

UR - http://www.scopus.com/inward/record.url?scp=0025547656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025547656&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(90)93886-N

DO - 10.1016/0042-207X(90)93886-N

M3 - Article

VL - 41

SP - 1121

EP - 1123

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 4-6

ER -