Epitaxial crystallization and nucleation during MeV-ion beam processing of amorphous GaAs surface layers

T. Bachmann, E. Glaser, R. Schulz, U. Kaiser, G. Sáfrán

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

〈100〉-GaAs wafers were preamorphized in a thin surface layer using 50 keV 14N+-ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) were studied as a function of the target temperature using MeV Ar+-or Kr+-ions. Backscattering experiments and electron microscopy show that the IBIEC process is stopped above a critical irradiation temperature due to enhanced ion beam induced nucleation and growth of crystallites. At a fixed dose an optimum irradiation temperature for IBIEC was found, at which the recrystallized layer thickness has a maximum and crystallite formation is negligible. This offers the possibility to crystallize much larger layer thicknesses than ≈ 65 nm which stands for the maximum value reported up to now.

Original languageEnglish
Pages (from-to)214-217
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume113
Issue number1-4
DOIs
Publication statusPublished - Jun 1996

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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