〈100〉-GaAs wafers were preamorphized in a thin surface layer using 50 keV 14N+-ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) were studied as a function of the target temperature using MeV Ar+-or Kr+-ions. Backscattering experiments and electron microscopy show that the IBIEC process is stopped above a critical irradiation temperature due to enhanced ion beam induced nucleation and growth of crystallites. At a fixed dose an optimum irradiation temperature for IBIEC was found, at which the recrystallized layer thickness has a maximum and crystallite formation is negligible. This offers the possibility to crystallize much larger layer thicknesses than ≈ 65 nm which stands for the maximum value reported up to now.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Jun 1996|
ASJC Scopus subject areas
- Nuclear and High Energy Physics