Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere

M. Voelskow, B. Pécz, J. Stoemenos, W. Skorupa

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Abstract

3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon-carbon clusters at the SiO2/Si interface facilitating the growth of 3C-SiC nanocrystallites.

Original languageEnglish
Pages (from-to)1364-1367
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume267
Issue number8-9
DOIs
Publication statusPublished - May 1 2009

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Keywords

  • Co - annealing
  • Ge Ion implantation
  • Nanocrystal formation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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