Entrance window structure of a Si (Li) detector

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Abstract

The response function of a Si (Li) detector with a 45 μm thick decompensated front p-Si layer, in order to enhance window effects, has been measured in the 1.2-6 keV X-ray energy region as a function of the so-called photo dead layer thickness in the 14-0.4 μm range by varying the detector bias between 200 and 1000 V. From measured spectrum component (photopeak, tail, shelf, escape and SiK line) intensity data, discrete regions responsible for particular spectrum components have been identified: (i) the Au surface barrier, in addition to characteristic X-rays, contributes only to the shelf, adjacent to it is located (ii) an "absolute" Si dead layer, which exists only in the undepleted p-region case, and produces no events except for the internal SiK fluorescence, followed by (iii) an incomplete charge collection region, divided into shelf and tail subrogions, beyond which (iv) there is the detector sensitive volume with complete charge collection, resulting in photo- and escape peaks, and a bulk shelf component as well. A model has also been developed for the explanation of the observed dead layer thickness dependence of escape- and SiK line intensity.

Original languageEnglish
Pages (from-to)470-484
Number of pages15
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume88
Issue number4
DOIs
Publication statusPublished - Jun 2 1994

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shelves
entrances
escape
Detectors
detectors
X rays
photopeak
Fluorescence
x rays
fluorescence
energy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Entrance window structure of a Si (Li) detector",
abstract = "The response function of a Si (Li) detector with a 45 μm thick decompensated front p-Si layer, in order to enhance window effects, has been measured in the 1.2-6 keV X-ray energy region as a function of the so-called photo dead layer thickness in the 14-0.4 μm range by varying the detector bias between 200 and 1000 V. From measured spectrum component (photopeak, tail, shelf, escape and SiK line) intensity data, discrete regions responsible for particular spectrum components have been identified: (i) the Au surface barrier, in addition to characteristic X-rays, contributes only to the shelf, adjacent to it is located (ii) an {"}absolute{"} Si dead layer, which exists only in the undepleted p-region case, and produces no events except for the internal SiK fluorescence, followed by (iii) an incomplete charge collection region, divided into shelf and tail subrogions, beyond which (iv) there is the detector sensitive volume with complete charge collection, resulting in photo- and escape peaks, and a bulk shelf component as well. A model has also been developed for the explanation of the observed dead layer thickness dependence of escape- and SiK line intensity.",
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T1 - Entrance window structure of a Si (Li) detector

AU - Kalinka, G.

PY - 1994/6/2

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N2 - The response function of a Si (Li) detector with a 45 μm thick decompensated front p-Si layer, in order to enhance window effects, has been measured in the 1.2-6 keV X-ray energy region as a function of the so-called photo dead layer thickness in the 14-0.4 μm range by varying the detector bias between 200 and 1000 V. From measured spectrum component (photopeak, tail, shelf, escape and SiK line) intensity data, discrete regions responsible for particular spectrum components have been identified: (i) the Au surface barrier, in addition to characteristic X-rays, contributes only to the shelf, adjacent to it is located (ii) an "absolute" Si dead layer, which exists only in the undepleted p-region case, and produces no events except for the internal SiK fluorescence, followed by (iii) an incomplete charge collection region, divided into shelf and tail subrogions, beyond which (iv) there is the detector sensitive volume with complete charge collection, resulting in photo- and escape peaks, and a bulk shelf component as well. A model has also been developed for the explanation of the observed dead layer thickness dependence of escape- and SiK line intensity.

AB - The response function of a Si (Li) detector with a 45 μm thick decompensated front p-Si layer, in order to enhance window effects, has been measured in the 1.2-6 keV X-ray energy region as a function of the so-called photo dead layer thickness in the 14-0.4 μm range by varying the detector bias between 200 and 1000 V. From measured spectrum component (photopeak, tail, shelf, escape and SiK line) intensity data, discrete regions responsible for particular spectrum components have been identified: (i) the Au surface barrier, in addition to characteristic X-rays, contributes only to the shelf, adjacent to it is located (ii) an "absolute" Si dead layer, which exists only in the undepleted p-region case, and produces no events except for the internal SiK fluorescence, followed by (iii) an incomplete charge collection region, divided into shelf and tail subrogions, beyond which (iv) there is the detector sensitive volume with complete charge collection, resulting in photo- and escape peaks, and a bulk shelf component as well. A model has also been developed for the explanation of the observed dead layer thickness dependence of escape- and SiK line intensity.

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