Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2

J. Frank, M. Fleischer, H. Meixner, A. Feltz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The use of high temperature operated metal oxides, like Ga2O3 thin films, for gas sensors shows promising properties in terms of reproducibility, longterm stability against interfering gases and low cross sensitivity to humidity. It is shown that by employing of SnO2 (0.1-3%At) as doping material a very effective donor for Ga2O3 has been found which allows an increase in conductivity up to two orders of magnitude as well as an enhancement of the gas-sensitivity. This is the basis for a significant reduction of the sensor chip size to obtain a reduction in the heating power.

Original languageEnglish
Title of host publicationInternational Conference on Solid-State Sensors and Actuators, Proceedings
PublisherIEEE
Pages955-958
Number of pages4
Volume2
Publication statusPublished - 1997
EventProceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 2 (of 2) - Chicago, IL, USA
Duration: Jun 16 1997Jun 19 1997

Other

OtherProceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 2 (of 2)
CityChicago, IL, USA
Period6/16/976/19/97

Fingerprint

Chemical sensors
Doping (additives)
Gases
Atmospheric humidity
Heating
Thin films
Oxides
Sensors
Metals
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Frank, J., Fleischer, M., Meixner, H., & Feltz, A. (1997). Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2. In International Conference on Solid-State Sensors and Actuators, Proceedings (Vol. 2, pp. 955-958). IEEE.

Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2. / Frank, J.; Fleischer, M.; Meixner, H.; Feltz, A.

International Conference on Solid-State Sensors and Actuators, Proceedings. Vol. 2 IEEE, 1997. p. 955-958.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Frank, J, Fleischer, M, Meixner, H & Feltz, A 1997, Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2. in International Conference on Solid-State Sensors and Actuators, Proceedings. vol. 2, IEEE, pp. 955-958, Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 2 (of 2), Chicago, IL, USA, 6/16/97.
Frank J, Fleischer M, Meixner H, Feltz A. Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2. In International Conference on Solid-State Sensors and Actuators, Proceedings. Vol. 2. IEEE. 1997. p. 955-958
Frank, J. ; Fleischer, M. ; Meixner, H. ; Feltz, A. / Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2. International Conference on Solid-State Sensors and Actuators, Proceedings. Vol. 2 IEEE, 1997. pp. 955-958
@inproceedings{f5ffad3106ee4e7f9a554416ddbd37ca,
title = "Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2",
abstract = "The use of high temperature operated metal oxides, like Ga2O3 thin films, for gas sensors shows promising properties in terms of reproducibility, longterm stability against interfering gases and low cross sensitivity to humidity. It is shown that by employing of SnO2 (0.1-3{\%}At) as doping material a very effective donor for Ga2O3 has been found which allows an increase in conductivity up to two orders of magnitude as well as an enhancement of the gas-sensitivity. This is the basis for a significant reduction of the sensor chip size to obtain a reduction in the heating power.",
author = "J. Frank and M. Fleischer and H. Meixner and A. Feltz",
year = "1997",
language = "English",
volume = "2",
pages = "955--958",
booktitle = "International Conference on Solid-State Sensors and Actuators, Proceedings",
publisher = "IEEE",

}

TY - GEN

T1 - Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2

AU - Frank, J.

AU - Fleischer, M.

AU - Meixner, H.

AU - Feltz, A.

PY - 1997

Y1 - 1997

N2 - The use of high temperature operated metal oxides, like Ga2O3 thin films, for gas sensors shows promising properties in terms of reproducibility, longterm stability against interfering gases and low cross sensitivity to humidity. It is shown that by employing of SnO2 (0.1-3%At) as doping material a very effective donor for Ga2O3 has been found which allows an increase in conductivity up to two orders of magnitude as well as an enhancement of the gas-sensitivity. This is the basis for a significant reduction of the sensor chip size to obtain a reduction in the heating power.

AB - The use of high temperature operated metal oxides, like Ga2O3 thin films, for gas sensors shows promising properties in terms of reproducibility, longterm stability against interfering gases and low cross sensitivity to humidity. It is shown that by employing of SnO2 (0.1-3%At) as doping material a very effective donor for Ga2O3 has been found which allows an increase in conductivity up to two orders of magnitude as well as an enhancement of the gas-sensitivity. This is the basis for a significant reduction of the sensor chip size to obtain a reduction in the heating power.

UR - http://www.scopus.com/inward/record.url?scp=0030673532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030673532&partnerID=8YFLogxK

M3 - Conference contribution

VL - 2

SP - 955

EP - 958

BT - International Conference on Solid-State Sensors and Actuators, Proceedings

PB - IEEE

ER -