Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se/As 2S 3 films

K. V. Adarsh, K. S. Sangunni, S. Kökényesi, I. Ivan, M. Shipljak

Research output: Contribution to journalArticle

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Abstract

Optical parameters of chalcogenide glass multilayers with 12-15 nm modulation lengths prepared by thermal evaporation can be changed by laser irradiation. Photoluminescence (PL) studies were carried out on such nonirradiated and irradiated multilayered samples of a-Se/As 2S 3 (sublayer thickness of a-Se is 4-5 nm for one set of samples and 1-2 nm for the other set. However As 2S 3 sublayer thickness is 11-12 nm for both sets of samples.) PL intensity can be increased by several orders of magnitude by reducing the Se well layer (lower band gap) thickness and can be further increased by irradiating the samples with appropriate wavelengths in the range of the absorption edge. The broadening of luminescence bands takes place either with a decrease in Se layer thickness or with irradiation. The former is due to the change in interface roughness and defects because of the enhanced structural disorder while the latter is due to photoinduced interdiffusion. The photoinduced interdiffusion creates defects at the interface between Se and As 2S 3 by forming an As-Se-S solid solution. From the deconvoluted PL spectrum, it is shown that the peak PL intensity, full width half maximum, and the PL quantum efficiency of particular defects giving rise to PL, can be tuned by changing the sublayer thickness or by interdiffusion.

Original languageEnglish
Article number044314
JournalJournal of Applied Physics
Volume97
Issue number4
DOIs
Publication statusPublished - Feb 15 2005

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photoluminescence
augmentation
defects
irradiation
quantum efficiency
solid solutions
roughness
evaporation
disorders
luminescence
modulation
glass
wavelengths
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se/As 2S 3 films. / Adarsh, K. V.; Sangunni, K. S.; Kökényesi, S.; Ivan, I.; Shipljak, M.

In: Journal of Applied Physics, Vol. 97, No. 4, 044314, 15.02.2005.

Research output: Contribution to journalArticle

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