Enhancement of oxidation resistance in Cu and Cu(Al) thin layers

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18 Citations (Scopus)

Abstract

High conductivity and good resistance to electromigration makes copper a promising interconnect material in microelectronics. However, one of its disadvantages is the poor corrosion resistance. Two methods of passivation are investigated and compared: Al alloying and BF2+ ion implantation. X-ray diffraction (XRD) and Rutherford Back-scattering Spectrometry (RBS) show the oxidation inhibition of both methods, but the different ratio of CuCO2 to CuO phases suggests different mechanisms of passivation. There are no definite oxide lines in the XRD spectrum of the implanted and annealed Cu(Al) sample, so the presence of Al and the implantation together give increased protection against oxidation. The difference between the two mechanisms of oxidation inhibition is discussed briefly.

Original languageEnglish
Pages (from-to)868-871
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume148
Issue number1-4
DOIs
Publication statusPublished - Jan 1 1999

Keywords

  • Aluminum
  • BS
  • Copper
  • Ion-implantation
  • Oxidation
  • XRD

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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