Engineering single defects in silicon carbide bulk, nanostructures and devices

A. Lohrmann, B. C. Johnson, A. F M Almutairi, D. W M Lau, M. Negri, M. Bosi, B. C. Gibson, J. C. McCallum, A. Gali, T. Ohshima, S. Castelletto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We will review recent demonstrations of single photon emission in different silicon carbide (SiC) polytypes, in both bulk and nano-structured form. Due to well established doping, and microand nanofabrication procedures deep defects photoluminescence (PL) can be electrically excited and incorporated in SiC nanomaterials. Finally we will report on preliminary results to incorporate near infrared defects in SiC nanoparticles.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
PublisherTrans Tech Publications Ltd
Pages312-317
Number of pages6
Volume858
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

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Keywords

  • Fluorescent nanoparticles
  • Quantum measurement
  • Single photon source

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Lohrmann, A., Johnson, B. C., Almutairi, A. F. M., Lau, D. W. M., Negri, M., Bosi, M., Gibson, B. C., McCallum, J. C., Gali, A., Ohshima, T., & Castelletto, S. (2016). Engineering single defects in silicon carbide bulk, nanostructures and devices. In Silicon Carbide and Related Materials 2015 (Vol. 858, pp. 312-317). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.312