Engineered Schottky barriers on n-In0.35Ga0.65As

Zs J. Horváth, Vo Van Tuyen, S. Franchi, A. Bosacchi, P. Frigeri, E. Gombia, R. Mosca, D. Pal, I. Kalmár, B. Szentpáli

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume80
Issue number1-3
DOIs
Publication statusPublished - Mar 22 2001

Keywords

  • Barrier height engineering
  • Computer simulation
  • InGaAs
  • Schottky barriers

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Engineered Schottky barriers on n-In<sub>0.35</sub>Ga<sub>0.65</sub>As'. Together they form a unique fingerprint.

  • Cite this