Engineered Schottky barriers on n-In0.35Ga0.65As

Z. Horváth, Vo Van Tuyen, S. Franchi, A. Bosacchi, P. Frigeri, E. Gombia, R. Mosca, D. Pal, I. Kalmár, B. Szentpáli

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalMaterials Science and Engineering B
Volume80
Issue number1-3
DOIs
Publication statusPublished - Mar 22 2001

Fingerprint

Molecular beam epitaxy
Doping (additives)
Computer simulation
molecular beam epitaxy
computerized simulation

Keywords

  • Barrier height engineering
  • Computer simulation
  • InGaAs
  • Schottky barriers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Horváth, Z., Van Tuyen, V., Franchi, S., Bosacchi, A., Frigeri, P., Gombia, E., ... Szentpáli, B. (2001). Engineered Schottky barriers on n-In0.35Ga0.65As. Materials Science and Engineering B, 80(1-3), 248-251. https://doi.org/10.1016/S0921-5107(00)00616-4

Engineered Schottky barriers on n-In0.35Ga0.65As. / Horváth, Z.; Van Tuyen, Vo; Franchi, S.; Bosacchi, A.; Frigeri, P.; Gombia, E.; Mosca, R.; Pal, D.; Kalmár, I.; Szentpáli, B.

In: Materials Science and Engineering B, Vol. 80, No. 1-3, 22.03.2001, p. 248-251.

Research output: Contribution to journalArticle

Horváth, Z, Van Tuyen, V, Franchi, S, Bosacchi, A, Frigeri, P, Gombia, E, Mosca, R, Pal, D, Kalmár, I & Szentpáli, B 2001, 'Engineered Schottky barriers on n-In0.35Ga0.65As', Materials Science and Engineering B, vol. 80, no. 1-3, pp. 248-251. https://doi.org/10.1016/S0921-5107(00)00616-4
Horváth, Z. ; Van Tuyen, Vo ; Franchi, S. ; Bosacchi, A. ; Frigeri, P. ; Gombia, E. ; Mosca, R. ; Pal, D. ; Kalmár, I. ; Szentpáli, B. / Engineered Schottky barriers on n-In0.35Ga0.65As. In: Materials Science and Engineering B. 2001 ; Vol. 80, No. 1-3. pp. 248-251.
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