The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFETs) scaling is accelerating introduction of new technologies to extend complementary metal-oxide semiconductors (CMOS) to and beyond the 32-nm technology node. This acceleration is simultaneously requiring the industry to scale CMOS to an increasingly difficult manufacturing domain well below the 45-nm node, and to invent fundamentally new approaches to information and signal processing in order to sustain functional scaling beyond the domain of CMOS. This paper introduces a set of technology relevance or evaluation criteria, and based on these criteria, offers a critical assessment of those technology entries for memory and logic being considered for post CMOS-scaling information processing. It also discusses charge-based nanoelectronics devices separately from those approaches proposing use of a new means for data representation or state variable.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering