Ellipsometric study of SiNx/nc-Si/SiNx multilayers

Peter Basa, Peter Petrik

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low pressure chemical vapour deposited and annealed SiNx/nc-Si/ SiNx layers preapred on Si substrates were characterized by spectrocopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. A significant effect of the deposition time and annealing process was obtained.

Original languageEnglish
Title of host publicationProceedings of the International Semiconductor Conference, CAS
Pages417-420
Number of pages4
Volume2
DOIs
Publication statusPublished - 2005
Event2005 International Semiconductor Conference, CAS 2005 - Sinaia, Romania
Duration: Oct 3 2005Oct 5 2005

Other

Other2005 International Semiconductor Conference, CAS 2005
CountryRomania
CitySinaia
Period10/3/0510/5/05

Fingerprint

Ellipsometry
Multilayers
Vapors
Annealing
Substrates
Chemical analysis

Keywords

  • Annealing
  • Ellipsometry
  • Nanocrystals
  • nc-Si
  • Silicon nitride
  • SiNx

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Basa, P., & Petrik, P. (2005). Ellipsometric study of SiNx/nc-Si/SiNx multilayers. In Proceedings of the International Semiconductor Conference, CAS (Vol. 2, pp. 417-420). [1558815] https://doi.org/10.1109/SMICND.2005.1558815

Ellipsometric study of SiNx/nc-Si/SiNx multilayers. / Basa, Peter; Petrik, Peter.

Proceedings of the International Semiconductor Conference, CAS. Vol. 2 2005. p. 417-420 1558815.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basa, P & Petrik, P 2005, Ellipsometric study of SiNx/nc-Si/SiNx multilayers. in Proceedings of the International Semiconductor Conference, CAS. vol. 2, 1558815, pp. 417-420, 2005 International Semiconductor Conference, CAS 2005, Sinaia, Romania, 10/3/05. https://doi.org/10.1109/SMICND.2005.1558815
Basa P, Petrik P. Ellipsometric study of SiNx/nc-Si/SiNx multilayers. In Proceedings of the International Semiconductor Conference, CAS. Vol. 2. 2005. p. 417-420. 1558815 https://doi.org/10.1109/SMICND.2005.1558815
Basa, Peter ; Petrik, Peter. / Ellipsometric study of SiNx/nc-Si/SiNx multilayers. Proceedings of the International Semiconductor Conference, CAS. Vol. 2 2005. pp. 417-420
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