Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

P. Petrik, T. Lohner, M. Fried, L. Bíró, N. Q. Khánh, J. Gyulai, W. Lehnert, C. Schneider, H. Ryssel

Research output: Contribution to journalArticle

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Abstract

Polysilicon layers with thicknesses between 8 and 600 nm deposited by low-pressure chemical vapor deposition at temperatures ranging from 560 to 640°C were characterized by spectroscopic ellipsometry (SE) to determine the layer thicknesses and compositions using multilayer optical models and the Bruggeman effective-medium approximation. The dependence of the structural parameters on the layer thickness and deposition temperature have been investigated. A better characterization of the polysilicon layer is achieved by using the reference data of fine-grained polysilicon in the optical model. The amount of voids in the polysilicon layer was independently measured by Rutherford backscattering spectrometry (RBS). The SE and RBS results show a good correlation. The comparison of the surface roughness measured by SE and atomic force microscopy (AFM) shows that independently of the AFM window sizes, a good correlation of the roughness determined by SE and AFM was obtained.

Original languageEnglish
Pages (from-to)1734-1742
Number of pages9
JournalJournal of Applied Physics
Volume87
Issue number4
Publication statusPublished - Feb 2000

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silicon films
low pressure
ellipsometry
vapor deposition
atomic force microscopy
backscattering
spectroscopy
voids
surface roughness
roughness
temperature
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition. / Petrik, P.; Lohner, T.; Fried, M.; Bíró, L.; Khánh, N. Q.; Gyulai, J.; Lehnert, W.; Schneider, C.; Ryssel, H.

In: Journal of Applied Physics, Vol. 87, No. 4, 02.2000, p. 1734-1742.

Research output: Contribution to journalArticle

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AU - Lohner, T.

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AU - Schneider, C.

AU - Ryssel, H.

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