Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2

M. I. Alonso, M. Garriga, A. Bernardi, A. R. Goñi, A. F. Lopeandia, G. Garcia, J. Rodríguez-Viejo, J. Lábár

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We use spectroscopic ellipsometry to investigate crystallization of amorphous Ge thin films by thermal annealing of SiO2/a-Ge/SiO2 trilayer structures. We study the influence of both film thickness and annealing temperature on the effective dielectric functions of the Ge films, which are related to the film micro- and nanostructures. For annealing temperatures below 900 °C, all films remain continuous and consist of mixtures of amorphous and nanocrystallized Ge. The crystallite sizes can be estimated from the observed energy blueshift of the E1 interband transition. Samples annealed at 900 °C display dielectric function spectra which differ from a bulk-like behavior. This suggests a variation in optical properties which is correlated to formation of discontinuous films of Ge nanocrystals.

Original languageEnglish
Pages (from-to)4277-4281
Number of pages5
JournalThin Solid Films
Volume516
Issue number12
DOIs
Publication statusPublished - Apr 30 2008

Fingerprint

Crystallization
crystallization
Thin films
Annealing
thin films
annealing
Spectroscopic ellipsometry
Crystallite size
Nanocrystals
ellipsometry
Film thickness
Nanostructures
nanocrystals
film thickness
Optical properties
optical properties
Temperature
microstructure
Microstructure
temperature

Keywords

  • Crystallization of a-Ge thin films
  • Ge nanocrystals
  • Quantum confinement of E transition
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Alonso, M. I., Garriga, M., Bernardi, A., Goñi, A. R., Lopeandia, A. F., Garcia, G., ... Lábár, J. (2008). Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2 Thin Solid Films, 516(12), 4277-4281. https://doi.org/10.1016/j.tsf.2008.01.003

Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2 . / Alonso, M. I.; Garriga, M.; Bernardi, A.; Goñi, A. R.; Lopeandia, A. F.; Garcia, G.; Rodríguez-Viejo, J.; Lábár, J.

In: Thin Solid Films, Vol. 516, No. 12, 30.04.2008, p. 4277-4281.

Research output: Contribution to journalArticle

Alonso, MI, Garriga, M, Bernardi, A, Goñi, AR, Lopeandia, AF, Garcia, G, Rodríguez-Viejo, J & Lábár, J 2008, 'Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2 ', Thin Solid Films, vol. 516, no. 12, pp. 4277-4281. https://doi.org/10.1016/j.tsf.2008.01.003
Alonso MI, Garriga M, Bernardi A, Goñi AR, Lopeandia AF, Garcia G et al. Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2 Thin Solid Films. 2008 Apr 30;516(12):4277-4281. https://doi.org/10.1016/j.tsf.2008.01.003
Alonso, M. I. ; Garriga, M. ; Bernardi, A. ; Goñi, A. R. ; Lopeandia, A. F. ; Garcia, G. ; Rodríguez-Viejo, J. ; Lábár, J. / Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2 In: Thin Solid Films. 2008 ; Vol. 516, No. 12. pp. 4277-4281.
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