Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

A. Szekeres, S. Alexandrova, P. Petrik, B. Fodor, S. Bakalova

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implantation with different fluences up to 1015 cm-2 are studied using spectroscopic ellipsometry and simulation of the distributions of the ions and implantation induced defects. The implantation was regarded to proceed into Si through the native SiO2. Two-layer optical models are applied for examination of the composition and dielectric function behavior of the formed structures. The native oxide is found to be 3 nm thick. The thickness of the Si modified layer decreased 23 to 14 nm with ion fluence due to increased formation of highly hydrogenated surface region that hinder further H-penetration into the Si bulk, especially at the highest fluence. Shifts of the features in the obtained dielectric functions related with Si interband transitions at about 3.4 and 4.2 eV are found caused by process-induced tensile stress. The modified Si region is related rather to defects created by the ion implantation process than the projected range of hydrogen ions. The overall layer modification can be characterized by a low degree of amorphization (up to 5.8%), creation of structural defects and internal tensile stress.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalApplied Surface Science
Volume281
DOIs
Publication statusPublished - Sep 15 2013

Fingerprint

Silicon
Ion implantation
Crystalline materials
Plasmas
Tensile stress
Defects
Ions
Spectroscopic ellipsometry
Amorphization
Oxides
Protons
Residual stresses
Optical properties
Chemical analysis
Hydrogen

Keywords

  • Oxidation of H ion implanted Si
  • Plasma-immersion implantation
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation. / Szekeres, A.; Alexandrova, S.; Petrik, P.; Fodor, B.; Bakalova, S.

In: Applied Surface Science, Vol. 281, 15.09.2013, p. 105-108.

Research output: Contribution to journalArticle

Szekeres, A. ; Alexandrova, S. ; Petrik, P. ; Fodor, B. ; Bakalova, S. / Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation. In: Applied Surface Science. 2013 ; Vol. 281. pp. 105-108.
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