Ellipsometric studies on semiconductor microcavity IR-detector structures

Bernd Rheinländer, Jaroslav Kováč, Jan David Hecht, Jurana Borgulová, František Uherek, Ján Waclawek, Volker Gottschalch, P. Barna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Spectroscopic ellipsometry and s-polarized reflection have been studied on resonant-cavity enhanced PIN photodiode structures based on MOVPE material systems (Al,Ga)InAs/InP with a bulk InAs absorber for 1300 nm and (Al,Ga)As/GaAs using MQW GaAs-exciton absorption for the 860 nm wavelength region. The optical constants of (Al,Ga)InAs determined for different compositions were used for design and realization of the resonator structure. In the case of (Al,Ga)As MQW exciton absorption the interaction between the exciton and resonator modes influences strongly the tuning of absorption resonance by means of the quantum confined Stark effect.

Original languageEnglish
Pages (from-to)599-603
Number of pages5
JournalThin Solid Films
Volume313-314
Publication statusPublished - Feb 13 1998

Fingerprint

Microcavities
Infrared detectors
Excitons
excitons
Semiconductor materials
Resonators
detectors
resonators
Stark effect
Metallorganic vapor phase epitaxy
Cavity resonators
Optical constants
Spectroscopic ellipsometry
cavity resonators
Photodiodes
ellipsometry
photodiodes
absorbers
Tuning
tuning

Keywords

  • Ellipsometry
  • Exciton
  • Infrared-detector
  • Microcavity
  • Reflectivity
  • Semiconductors

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Rheinländer, B., Kováč, J., Hecht, J. D., Borgulová, J., Uherek, F., Waclawek, J., ... Barna, P. (1998). Ellipsometric studies on semiconductor microcavity IR-detector structures. Thin Solid Films, 313-314, 599-603.

Ellipsometric studies on semiconductor microcavity IR-detector structures. / Rheinländer, Bernd; Kováč, Jaroslav; Hecht, Jan David; Borgulová, Jurana; Uherek, František; Waclawek, Ján; Gottschalch, Volker; Barna, P.

In: Thin Solid Films, Vol. 313-314, 13.02.1998, p. 599-603.

Research output: Contribution to journalArticle

Rheinländer, B, Kováč, J, Hecht, JD, Borgulová, J, Uherek, F, Waclawek, J, Gottschalch, V & Barna, P 1998, 'Ellipsometric studies on semiconductor microcavity IR-detector structures', Thin Solid Films, vol. 313-314, pp. 599-603.
Rheinländer B, Kováč J, Hecht JD, Borgulová J, Uherek F, Waclawek J et al. Ellipsometric studies on semiconductor microcavity IR-detector structures. Thin Solid Films. 1998 Feb 13;313-314:599-603.
Rheinländer, Bernd ; Kováč, Jaroslav ; Hecht, Jan David ; Borgulová, Jurana ; Uherek, František ; Waclawek, Ján ; Gottschalch, Volker ; Barna, P. / Ellipsometric studies on semiconductor microcavity IR-detector structures. In: Thin Solid Films. 1998 ; Vol. 313-314. pp. 599-603.
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