Ellipsometric characterization of shallow damage profiles created by Xe-implantation into silicon

P. Petrik, O. Polgár, T. Lohner, M. Fried, N. Q. Khánh, J. Gyulai, Essam Ramadan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Shallow damage profiles created by Xe-implantation into Si were characterized using spectroscopic ellipsometry (SE). 100 keV Xe ions with doses ranging from 1 × 1013 to 1.6 × 1014 cm-2 caused damage peaks at about 30 nm from the surface. The SE measurement is based on the fact that the ion implantation induced disorder changes the complex refractive index of the implanted material, therefore, it can be measured by optical methods. Because SE is an indirect technique, the sample properties are determined using proper optical models, and parameter fitting. The optical models and the fitting algorithms are crucial for getting reliable results. In this study we also present improved models and algorithms for the evaluation of the SE spectra. In the improved model the thicknesses of the sublayers are automatically calculated from the four parameters of the coupled half-Gaussian profile, while the number of the layers are held constant. This ensures that the calculation time does not increase when using the improved optical model. A new fitting algorithm, which we call multi point random search, was applied to minimize the probability of getting in a local minimum. The improved fit quality and the results from Rutherford backscattering spectrometry measurements used as cross-checking basically supported the new optical model.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages601-604
Number of pages4
Volume22-27-September-2002
ISBN (Print)0780371550
DOIs
Publication statusPublished - 2002
Event2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States
Duration: Sep 22 2002Sep 27 2002

Other

Other2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
CountryUnited States
CityTaos
Period9/22/029/27/02

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Keywords

  • Ellipsometry
  • Ion implantation
  • Optical materials
  • Optical refraction
  • Optical variables control
  • Particle beam optics
  • Refractive index
  • Silicon
  • Spectroscopy
  • Surface fitting

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Petrik, P., Polgár, O., Lohner, T., Fried, M., Khánh, N. Q., Gyulai, J., & Ramadan, E. (2002). Ellipsometric characterization of shallow damage profiles created by Xe-implantation into silicon. In Proceedings of the International Conference on Ion Implantation Technology (Vol. 22-27-September-2002, pp. 601-604). [1258077] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258077