Ellipsometric characterization of damage profiles using an advanced optical model

P. Petrik, O. Polgár, M. Fried, T. Lohner, N. Q. Khánh, J. Gyulai

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The damage on the single crystalline silicon which is due to ion implantation was discussed. An optical model which is based on the coupled half-Gaussian model was used. Results showed that sublayers with thickness are inversely proportional to the slope of the profile.

Original languageEnglish
Pages (from-to)1987-1990
Number of pages4
JournalJournal of Applied Physics
Volume93
Issue number4
DOIs
Publication statusPublished - Feb 15 2003

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damage
profiles
ion implantation
slopes
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Ellipsometric characterization of damage profiles using an advanced optical model. / Petrik, P.; Polgár, O.; Fried, M.; Lohner, T.; Khánh, N. Q.; Gyulai, J.

In: Journal of Applied Physics, Vol. 93, No. 4, 15.02.2003, p. 1987-1990.

Research output: Contribution to journalArticle

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