Electronic state and catalytic activity of SiO2 doped γ–Al2O3

I. Bertóti, G. Mink, T. Székely, G. Varsányi, F. Réti

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Silica‐alumina catalysts have been applied for a long time in cracking and reforming reactions. Lewis type surface sites are generally accepted to serve as active centers. In this respect, surface properties of these materials are of main concern. In the present work SiO2 doped γ‐Al2O3 with less than a monolayer coverage were prepared by the reaction of SiCl4 (g) with γ‐Al2O3 at 820‐1120 K. Catalytic activity of the samples was tested by a model reaction of n‐hexane cracking. Surface composition and electronic state were evaluated by XPS investigations performed on a KRATOS XSAM 800 instrument. Catalytic activity (conversion) varies remarkably with increasing Si content showing a sharp maximum at low Si coverage. The observed shift of Al 2p lines with increasing Si content is interpreted as an enhancement of the acceptor or acidic character of the surface Al atoms. The Auger parameter for Si(α'Si), (composed by addition of Si 2p BE and Si (KLL) KE values) passes also through a maximum at the same Si‐content, as does the conversion curve. A close correlation of the Auger parameter and the catalytic activity is established for samples with (Si/Al)≲7%. This leads to a conclusion, that the rise in extra‐atomic relaxation energy may serve as an additional indication of enhanced catalytic activity.

Original languageEnglish
Pages (from-to)237-241
Number of pages5
JournalSurface and Interface Analysis
Volume9
Issue number4
DOIs
Publication statusPublished - Jul 1986

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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