ELECTRONIC STATE AND CATALYTIC ACTIVITY OF SiO//2 DOPED gamma -Al//2O//3.

I. Bertóti, G. Mink, T. Szekely, G. Varsanyi, F. Reti

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Citations (Scopus)

Abstract

Silica-alumina catalysts have been applied for a long time in cracking and reforming reactions. Lewis type surface sites are generally accepted to serve as active centers. In this respect, surface properties of these materials are of main concern. In the present work SiO//2 doped gamma -Al//2O//3 with less than a monolayer coverage were prepared by the reaction of SiCl//4(g) with gamma -Al//2O//3 at 820-1120 K. Catalytic activity of the samples was tested by a model reaction of n-hexane cracking. Surface composition and electronic state were evaluated by XPS investigations performed on a KRATOS XSAM 800 instrument. Catalytic activity (conversion) varies remarkably with increasing Si content showing a sharp maximum at low Si coverage. The observed shift of Al 2p lines with increasing Si content is interpreted as an enhancement of the acceptor or acidic character of the surface Al atoms.

Original languageEnglish
Title of host publicationSurface and Interface Analysis
Pages237-241
Number of pages5
Volume9
Edition1-6
Publication statusPublished - Jul 1986
EventSurf and Interface Anal, ECASIA 85, Proc of the Eur Conf on Appl of Surf and Interface Anal - Veldhoven, Neth
Duration: Oct 14 1986Oct 18 1986

Other

OtherSurf and Interface Anal, ECASIA 85, Proc of the Eur Conf on Appl of Surf and Interface Anal
CityVeldhoven, Neth
Period10/14/8610/18/86

Fingerprint

Electronic states
catalytic activity
Catalyst activity
Aluminum Oxide
Reforming reactions
Hexane
electronics
Surface structure
Silicon Dioxide
Surface properties
Monolayers
Alumina
X ray photoelectron spectroscopy
Silica
Atoms
surface properties
Catalysts
aluminum oxides
silicon dioxide
catalysts

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

Bertóti, I., Mink, G., Szekely, T., Varsanyi, G., & Reti, F. (1986). ELECTRONIC STATE AND CATALYTIC ACTIVITY OF SiO//2 DOPED gamma -Al//2O//3. In Surface and Interface Analysis (1-6 ed., Vol. 9, pp. 237-241)

ELECTRONIC STATE AND CATALYTIC ACTIVITY OF SiO//2 DOPED gamma -Al//2O//3. / Bertóti, I.; Mink, G.; Szekely, T.; Varsanyi, G.; Reti, F.

Surface and Interface Analysis. Vol. 9 1-6. ed. 1986. p. 237-241.

Research output: Chapter in Book/Report/Conference proceedingChapter

Bertóti, I, Mink, G, Szekely, T, Varsanyi, G & Reti, F 1986, ELECTRONIC STATE AND CATALYTIC ACTIVITY OF SiO//2 DOPED gamma -Al//2O//3. in Surface and Interface Analysis. 1-6 edn, vol. 9, pp. 237-241, Surf and Interface Anal, ECASIA 85, Proc of the Eur Conf on Appl of Surf and Interface Anal, Veldhoven, Neth, 10/14/86.
Bertóti I, Mink G, Szekely T, Varsanyi G, Reti F. ELECTRONIC STATE AND CATALYTIC ACTIVITY OF SiO//2 DOPED gamma -Al//2O//3. In Surface and Interface Analysis. 1-6 ed. Vol. 9. 1986. p. 237-241
Bertóti, I. ; Mink, G. ; Szekely, T. ; Varsanyi, G. ; Reti, F. / ELECTRONIC STATE AND CATALYTIC ACTIVITY OF SiO//2 DOPED gamma -Al//2O//3. Surface and Interface Analysis. Vol. 9 1-6. ed. 1986. pp. 237-241
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