A line defect on a metallic surface induces standing waves in the electronic local density of states (LDOS). Asymptotically far from the defect, the wave number of the LDOS oscillations at the Fermi energy is usually equal to the distance between nesting segments of the Fermi contour, and the envelope of the LDOS oscillations shows a power-law decay as moving away from the line defect. Here, we theoretically analyze the LDOS oscillations close to a line defect on the surface of the topological insulator Bi 2Te 3, and identify an important preasymptotic contribution with wave-number and decay characteristics markedly different from the asymptotic contributions. The calculated energy dependence of the wave number of the preasymptotic LDOS oscillations is in quantitative agreement with the result of a recent scanning tunneling microscopy experiment.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Aug 29 2012|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics