Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Anatoly I. Kovalev, D. L. Wainstein, D. I. Tetelbaum, A. N. Mikhailov, Y. Golan, Y. Lifshitz, A. Berman, P. Basa, Z. Horváth

Research output: Contribution to journalArticle

Abstract

The electron spectroscopy techniques (X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), High Resolution Electron Energy Losses Spectroscopy (HREELS), EELFS) were used for characterisation of semiconductor nanocrystals (Si, PbS, CdS) formed by various technologies: Si ion implantation in Al2O3 matrix and annealing; Si-rich multilayered SiNX Low Pressure Chemical Vapour Deposition (LPCVD); PbS and ZnS nanocrystals on Polydiacetylene (PDA) Langmuir-Blodget polymer films. The chemical, phase and atomic structure non-uniformity were determined using depth profiling techniques. The peculiarities of the ‘matrix-nanocrystal’ interface atomic and electronic structure, especially for nanocrystals were determined from analysis of XPS chemical shifts and vibrational spectra. The accommodation strains in the Si-nc:AL, O3 system were determined by EELFS. The comparison of electron spectroscopy methods and other techniques for nanocrystals investigations (PL, HR-TEM, ellipsometry) is made.

Original languageEnglish
Pages (from-to)14-31
Number of pages18
JournalInternational Journal of Nanoparticles
Volume1
Issue number1
DOIs
Publication statusPublished - 2008

Fingerprint

Electron spectroscopy
Nanocrystals
electron spectroscopy
nanocrystals
Semiconductor materials
atomic structure
X ray photoelectron spectroscopy
photoelectron spectroscopy
Crystal atomic structure
Low pressure chemical vapor deposition
Depth profiling
Electron energy loss spectroscopy
Langmuir Blodgett films
accommodation
Ellipsometry
Chemical shift
Vibrational spectra
Auger electron spectroscopy
Phase structure
matrices

Keywords

  • atomic structure
  • auger electron spectroscopy
  • depth profiling
  • electron energy losses fine structure spectroscopy
  • electronic structure
  • high resolution electron energy losses spectroscopy
  • semiconductor nanocrystals
  • surface
  • x-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Mechanical Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies. / Kovalev, Anatoly I.; Wainstein, D. L.; Tetelbaum, D. I.; Mikhailov, A. N.; Golan, Y.; Lifshitz, Y.; Berman, A.; Basa, P.; Horváth, Z.

In: International Journal of Nanoparticles, Vol. 1, No. 1, 2008, p. 14-31.

Research output: Contribution to journalArticle

Kovalev, AI, Wainstein, DL, Tetelbaum, DI, Mikhailov, AN, Golan, Y, Lifshitz, Y, Berman, A, Basa, P & Horváth, Z 2008, 'Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies', International Journal of Nanoparticles, vol. 1, no. 1, pp. 14-31. https://doi.org/10.1504/IJNP.2008.017616
Kovalev, Anatoly I. ; Wainstein, D. L. ; Tetelbaum, D. I. ; Mikhailov, A. N. ; Golan, Y. ; Lifshitz, Y. ; Berman, A. ; Basa, P. ; Horváth, Z. / Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies. In: International Journal of Nanoparticles. 2008 ; Vol. 1, No. 1. pp. 14-31.
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