Electron scattering mechanisms in Cu-Mn films for interconnect applications

F. Misják, K. H. Nagy, P. Lobotka, G. Radnóczi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Electrical properties and corresponding structural features of Cu-Mn alloy films with potential application as barrier and interconnect layers were studied. Cu-Mn films were deposited by DC magnetron sputtering at room temperature on SiO2 substrates. Electrical resistivity measurements were made as a function of film composition and temperature. The specific resistivity varies linearly with the Mn content showing a maximum of 205 μΩcm at 80 at. % Mn. The temperature coefficient of resistance (TCR) of all alloy films is low, showing non-metallic conductivity for most compositions. Also a minimum TCR has been observed in the 40-80 at. % Mn range which was attributed to a magnetic transformation around 200-300K. Electrical resistivity measurements are correlated with the film structure revealed by transmission electron microscopy to clarify the phase regions throughout the composition range. In the 20-40 at. % and 70-80 at. % Mn ranges, two-phase structures were identified, where Cu- or Mn-rich solid solution grains were surrounded by a thin amorphous covering layer. Based on the revealed phase regions and morphologies electron scattering mechanisms in the system were evaluated by combining the Matthiessen's rule and the Mayadas-Schatzkes theory. Grain boundary reflectivity coefficients (r=0.6-0.8) were calculated from fitting the model to the measurements. The proposed model indicates that, in a binary system, the special arrangement of the two phases results in new scattering mechanisms. The results are of value in optimizing the various parameters needed to produce a suitable barrier layer.

Original languageEnglish
Article number083507
JournalJournal of Applied Physics
Volume116
Issue number8
DOIs
Publication statusPublished - 2014

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electron scattering
barrier layers
electrical resistivity
coefficients
temperature
magnetron sputtering
coverings
solid solutions
grain boundaries
direct current
electrical properties
reflectance
conductivity
transmission electron microscopy
room temperature
scattering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron scattering mechanisms in Cu-Mn films for interconnect applications. / Misják, F.; Nagy, K. H.; Lobotka, P.; Radnóczi, G.

In: Journal of Applied Physics, Vol. 116, No. 8, 083507, 2014.

Research output: Contribution to journalArticle

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