Electron mobility in an epitaxial layer grown on a highly conductive substrate can be determined by angle dependent magnetoresistance measurements. In this letter electron mobility has been measured first in the literature in undoped InGaAs epitaxial layers (n∼1×1015 cm-3) on n-InP substrate (n∼1018 cm-3). Because of the low resistance of the InGaAs layer compared to the series resistance of the structure, mainly that of the contacts, the acceptable range of contact resistances is indicated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)