Electron mobility measured in undoped InGaAs epitaxial layer grown on n-InP substrate

K. Somogyi, J. Pfeifer

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electron mobility in an epitaxial layer grown on a highly conductive substrate can be determined by angle dependent magnetoresistance measurements. In this letter electron mobility has been measured first in the literature in undoped InGaAs epitaxial layers (n∼1×1015 cm-3) on n-InP substrate (n∼1018 cm-3). Because of the low resistance of the InGaAs layer compared to the series resistance of the structure, mainly that of the contacts, the acceptable range of contact resistances is indicated.

Original languageEnglish
Pages (from-to)2220-2221
Number of pages2
JournalApplied Physics Letters
Volume61
Issue number18
DOIs
Publication statusPublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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