Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy

A. Baraldi, F. Colonna, C. Ghezzi, R. Magnanini, A. Parisini, L. Tarricone, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

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Abstract

Electron mobility and low-field transverse physical magnetoresistance were measured in Te-doped GaSb layers grown by molecular beam epitaxy. The samples investigated had electron densities ranging from 1016 to 1018 cm-3; measurements were taken in the 8-300 K temperature range. The high mobility values demonstrate that SnTe can be used as a source of Te doping with results comparable with GaTe. A detailed analysis of the magnetoresistance data demonstrates that in samples with high electron density (n & 1018 cm-3) the magnetoresistance is mainly due to mixed conduction of electrons in both Γ and L conduction band minima: the analysis gives the temperature dependence of the μΓ and μL mobilities and of the EL - EΓ energy separation between L and Γ edges. EL - EΓ is 82 meV at 300 K and 67 meV at 8 K and exhibits a non-monotonic behaviour within the temperature range explored. In samples with low electron density (n ≈ 1016 cm-3) the magnetoresistance is mainly due to the energy distribution of carriers in the Γ valley.

Original languageEnglish
Pages (from-to)1656-1667
Number of pages12
JournalSemiconductor Science and Technology
Volume11
Issue number11
DOIs
Publication statusPublished - 1996

Fingerprint

Electron mobility
Magnetoresistance
electron mobility
Molecular beam epitaxy
molecular beam epitaxy
Carrier concentration
valleys
energy distribution
conduction bands
Conduction bands
Temperature
conduction
temperature dependence
temperature
Doping (additives)
Electrons
electrons
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Baraldi, A., Colonna, F., Ghezzi, C., Magnanini, R., Parisini, A., Tarricone, L., ... Franchi, S. (1996). Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy. Semiconductor Science and Technology, 11(11), 1656-1667. https://doi.org/10.1088/0268-1242/11/11/004

Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy. / Baraldi, A.; Colonna, F.; Ghezzi, C.; Magnanini, R.; Parisini, A.; Tarricone, L.; Bosacchi, A.; Franchi, S.

In: Semiconductor Science and Technology, Vol. 11, No. 11, 1996, p. 1656-1667.

Research output: Contribution to journalArticle

Baraldi, A, Colonna, F, Ghezzi, C, Magnanini, R, Parisini, A, Tarricone, L, Bosacchi, A & Franchi, S 1996, 'Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy', Semiconductor Science and Technology, vol. 11, no. 11, pp. 1656-1667. https://doi.org/10.1088/0268-1242/11/11/004
Baraldi, A. ; Colonna, F. ; Ghezzi, C. ; Magnanini, R. ; Parisini, A. ; Tarricone, L. ; Bosacchi, A. ; Franchi, S. / Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy. In: Semiconductor Science and Technology. 1996 ; Vol. 11, No. 11. pp. 1656-1667.
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