Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si

N. Vouroutzis, G. Z. Radnóczi, E. Dodony, G. Battistig, J. Stoemenos, B. Pécz, N. Frangis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of the Ni-MILC process. The structural characteristics of the implanted by Boron and subsequently crystallized by MILC a-Si films are studied by Transmission Electron Microscopy (TEM) and they are compared to intrinsic a-Si films which were deposited on top, as well as beside the boron implanted a-Si film. During the annealing, spontaneous nucleation occurs in the B-doped films far from the a-c interface, revealing a shorter incubation period in the B-doped films.

Original languageEnglish
Title of host publicationMaterials Today: Proceedings
PublisherElsevier Ltd
Pages825-831
Number of pages7
Volume3
Edition3
DOIs
Publication statusPublished - 2016

Keywords

  • Boron implantation
  • Metal Induced Lateral Crystallization

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si'. Together they form a unique fingerprint.

  • Cite this

    Vouroutzis, N., Radnóczi, G. Z., Dodony, E., Battistig, G., Stoemenos, J., Pécz, B., & Frangis, N. (2016). Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si. In Materials Today: Proceedings (3 ed., Vol. 3, pp. 825-831). Elsevier Ltd. https://doi.org/10.1016/j.matpr.2016.02.015