Electron microscopy study of Ni induced crystallization in amorphous Si thin films

G. Z. Radnóczi, E. Dodony, G. Battistig, N. Vouroutzis, J. Stoemenos, N. Frangis, A. Kovács, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi2 phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi2 grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni3Si2. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.

Original languageEnglish
Title of host publicationInternational Conferences and Exhibition on Nanotechnologies and Organic Electronics, NANOTEXNOLOGY 2014 - Proceedings of NN 2014 and ISFOE 2014
EditorsStergios Logothetidis, Argirios Laskarakis, Christoforos Gravalidis
PublisherAmerican Institute of Physics Inc.
Pages31-37
Number of pages7
ISBN (Electronic)9780735412859
DOIs
Publication statusPublished - Jan 1 2014
EventInternational Conferences and Exhibition on Nanotechnologies and Organic Electronics, NANOTEXNOLOGY 2014 - Thessaloniki, Greece
Duration: Jul 5 2014Jul 12 2014

Publication series

NameAIP Conference Proceedings
Volume1646
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceInternational Conferences and Exhibition on Nanotechnologies and Organic Electronics, NANOTEXNOLOGY 2014
CountryGreece
CityThessaloniki
Period7/5/147/12/14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Radnóczi, G. Z., Dodony, E., Battistig, G., Vouroutzis, N., Stoemenos, J., Frangis, N., Kovács, A., & Pécz, B. (2014). Electron microscopy study of Ni induced crystallization in amorphous Si thin films. In S. Logothetidis, A. Laskarakis, & C. Gravalidis (Eds.), International Conferences and Exhibition on Nanotechnologies and Organic Electronics, NANOTEXNOLOGY 2014 - Proceedings of NN 2014 and ISFOE 2014 (pp. 31-37). (AIP Conference Proceedings; Vol. 1646). American Institute of Physics Inc.. https://doi.org/10.1063/1.4908579