Radiation annealing due to a 1. 0 MeV electron beam of intensity 25 mu A/cm**2 was studied in silicon samples implanted with phosphorus and boron ions and annealed at 350-500 degree C. A significant annealing enhancement as compared to thermal annealing has been observed in phosphorus-implanted samples. In boron-implanted samples, a fast initial rise of electrical activity is followed by a continuous decrease of carrier concentration. The results are interpreted in terms of two competing processes: electron irradiation induced removal of post-implantation defects and introduction of simple electrically active defects.
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