Electron irradiation assisted annealing of boron and phosphorus implanted silicon layers

J. Suski, L. Csepregi, J. Gyulai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Radiation annealing due to a 1. 0 MeV electron beam of intensity 25 mu A/cm**2 was studied in silicon samples implanted with phosphorus and boron ions and annealed at 350-500 degree C. A significant annealing enhancement as compared to thermal annealing has been observed in phosphorus-implanted samples. In boron-implanted samples, a fast initial rise of electrical activity is followed by a continuous decrease of carrier concentration. The results are interpreted in terms of two competing processes: electron irradiation induced removal of post-implantation defects and introduction of simple electrically active defects.

Original languageEnglish
Pages (from-to)137-141
Number of pages5
JournalRadiation Effects
Volume29
Issue number3
Publication statusPublished - 1976

Fingerprint

Boron
Electron irradiation
Silicon
electron irradiation
Phosphorus
phosphorus
boron
Electrons
Annealing
annealing
silicon
Defects
Hot Temperature
defects
Ions
Radiation
Carrier concentration
Electron beams
implantation
electron beams

ASJC Scopus subject areas

  • Engineering(all)
  • Medicine(all)

Cite this

Electron irradiation assisted annealing of boron and phosphorus implanted silicon layers. / Suski, J.; Csepregi, L.; Gyulai, J.

In: Radiation Effects, Vol. 29, No. 3, 1976, p. 137-141.

Research output: Contribution to journalArticle

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