Abstract
Quantitative studies of oxidation kinetics by electron spectroscopies require knowledge of the IMFP of electrons in the oxide. In general, IMFP data for oxides are not available. A method is presented for the determination of the IMFP in beryllium oxide using RBS to determine the oxide thickness and AES to measure the chemically shifted Be Auger electron intensity from the BeO-covered surface and the unshifted signal from the Be substrate. Using the normal exponential attenuation relationship between material thickness and the AES signal passing through the material, an IMFP of 6. 0 plus or minus 0. 8 monolayers is determined for approximately 100 ev electrons in HeO. In these experiments the oxide was grown at a temperature (approximately 700 K) which ensured a good single crystal epitaxy on the substrate. Because of this good structural characterization, the IMFP can be presented equally well in units of monolayers or in units of length. The accuracy of the method and its general applicability to other materials is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1021-1025 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 1 |
| Issue number | 2 pt 2 |
| DOIs | |
| Publication status | Published - Apr 1982 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
Cite this
ELECTRON INELASTIC MEAN FREE PATH (IMFP) IN SINGLE CRYSTAL BeO BY RUTHERFORD BACKSCATTERING (RBS) AND AUGER ELECTRON SPECTROSCOPY (AES). / Fowler, D. E.; Gyulai, J.; Palmstrom, C.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 1, No. 2 pt 2, 04.1982, p. 1021-1025.Research output: Contribution to journal › Article
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TY - JOUR
T1 - ELECTRON INELASTIC MEAN FREE PATH (IMFP) IN SINGLE CRYSTAL BeO BY RUTHERFORD BACKSCATTERING (RBS) AND AUGER ELECTRON SPECTROSCOPY (AES).
AU - Fowler, D. E.
AU - Gyulai, J.
AU - Palmstrom, C.
PY - 1982/4
Y1 - 1982/4
N2 - Quantitative studies of oxidation kinetics by electron spectroscopies require knowledge of the IMFP of electrons in the oxide. In general, IMFP data for oxides are not available. A method is presented for the determination of the IMFP in beryllium oxide using RBS to determine the oxide thickness and AES to measure the chemically shifted Be Auger electron intensity from the BeO-covered surface and the unshifted signal from the Be substrate. Using the normal exponential attenuation relationship between material thickness and the AES signal passing through the material, an IMFP of 6. 0 plus or minus 0. 8 monolayers is determined for approximately 100 ev electrons in HeO. In these experiments the oxide was grown at a temperature (approximately 700 K) which ensured a good single crystal epitaxy on the substrate. Because of this good structural characterization, the IMFP can be presented equally well in units of monolayers or in units of length. The accuracy of the method and its general applicability to other materials is discussed.
AB - Quantitative studies of oxidation kinetics by electron spectroscopies require knowledge of the IMFP of electrons in the oxide. In general, IMFP data for oxides are not available. A method is presented for the determination of the IMFP in beryllium oxide using RBS to determine the oxide thickness and AES to measure the chemically shifted Be Auger electron intensity from the BeO-covered surface and the unshifted signal from the Be substrate. Using the normal exponential attenuation relationship between material thickness and the AES signal passing through the material, an IMFP of 6. 0 plus or minus 0. 8 monolayers is determined for approximately 100 ev electrons in HeO. In these experiments the oxide was grown at a temperature (approximately 700 K) which ensured a good single crystal epitaxy on the substrate. Because of this good structural characterization, the IMFP can be presented equally well in units of monolayers or in units of length. The accuracy of the method and its general applicability to other materials is discussed.
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U2 - 10.1116/1.572330
DO - 10.1116/1.572330
M3 - Article
AN - SCOPUS:0020112484
VL - 1
SP - 1021
EP - 1025
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 2 pt 2
ER -