Electron diffraction study on the molecular structure of methyltrimethoxysilane

É Gergö, I. Hargittai, Gy Schultz

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The electron diffraction data for methyltrimethoxysilane are consistent with a C3 symmetry model, the predominant forms of which have rotational angle(s) between 100 and 155° around the SiO bond (the anti conformation of the CSiOC chain would respond to 0°). There is probably large amplitude motion around the SiO bonds. The following bond lengths and bond angles were determined: ra(CH) 1.093 ± 0.005, ra(SiC) 1.842 ± 0.013, ra(SiO) 1.632 ± 0.004, ra(OC) 1.425 ± 0.004 », ∠CSiO 109.6 ± 0.5°. and ∠SiOC 123.6 ± 0.5°.

Original languageEnglish
Pages (from-to)29-35
Number of pages7
JournalJournal of Organometallic Chemistry
Volume112
Issue number1
DOIs
Publication statusPublished - May 25 1976

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Bond length
Molecular Structure
Electron diffraction
Molecular structure
Conformations
molecular structure
electron diffraction
Electrons
methylidyne
symmetry
methyltrimethoxysilane

ASJC Scopus subject areas

  • Biochemistry
  • Chemical Engineering (miscellaneous)
  • Inorganic Chemistry
  • Organic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Science (miscellaneous)
  • Materials Chemistry

Cite this

Electron diffraction study on the molecular structure of methyltrimethoxysilane. / Gergö, É; Hargittai, I.; Schultz, Gy.

In: Journal of Organometallic Chemistry, Vol. 112, No. 1, 25.05.1976, p. 29-35.

Research output: Contribution to journalArticle

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AB - The electron diffraction data for methyltrimethoxysilane are consistent with a C3 symmetry model, the predominant forms of which have rotational angle(s) between 100 and 155° around the SiO bond (the anti conformation of the CSiOC chain would respond to 0°). There is probably large amplitude motion around the SiO bonds. The following bond lengths and bond angles were determined: ra(CH) 1.093 ± 0.005, ra(SiC) 1.842 ± 0.013, ra(SiO) 1.632 ± 0.004, ra(OC) 1.425 ± 0.004 », ∠CSiO 109.6 ± 0.5°. and ∠SiOC 123.6 ± 0.5°.

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