Electroluminescence investigation of GaAs/AlAs monolayer multiquantum well structures

J. Kováč, D. Pudiš, A. Šatka, J. Lábár, R. Redhammer, V. Gotschalch, R. Schwabe, B. Rheinländer, R. Pickenhain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present experimental studies of electroluminescence in GaAs/AlAs type II monolayer multiquantum well (MQW) heterostructures embedded in InAlP undoped confinement layer grown by low pressure MOVPE. The p-n junction in structure was created by local diffusion of Zn from conductive ZnO film. The phonon assisted optical processes are observed at room temperature where indirect optical transitions at 545 and 720 nm are present in weak electroluminescence spectra. Intense optical transition at 572 nm prevail at the low temperature (77 K) which corresponds to type I optical transition. Type II optical transition at 688 nm in GaAs/AlAs MQW structure shows low intensity. The electroluminescence of type I optical transitions in type II monolayer GaAs/AlAs MQW structures is reported for the first time.

Original languageEnglish
Title of host publicationASDAM 1998 Conference Proceedings
Subtitle of host publication2nd International Conference on Advanced Semiconductor Devices And Microsystems
EditorsFrantisek Uherek, Vladimir Drobny, Juraj Breza, Daniel Donoval
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages275-278
Number of pages4
Volume1998-October
ISBN (Electronic)0780349091, 9780780349094
DOIs
Publication statusPublished - Jan 1 1998
Event2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998 - Smolenice, Slovakia
Duration: Oct 5 1998Oct 7 1998

Other

Other2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998
CountrySlovakia
CitySmolenice
Period10/5/9810/7/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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    Kováč, J., Pudiš, D., Šatka, A., Lábár, J., Redhammer, R., Gotschalch, V., Schwabe, R., Rheinländer, B., & Pickenhain, R. (1998). Electroluminescence investigation of GaAs/AlAs monolayer multiquantum well structures. In F. Uherek, V. Drobny, J. Breza, & D. Donoval (Eds.), ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems (Vol. 1998-October, pp. 275-278). [730216] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.1998.730216