Electrically and mechanically tunable electron spins in silicon carbide color centers

Abram L. Falk, Paul V. Klimov, Bob B. Buckley, Viktor Ivády, Igor A. Abrikosov, Greg Calusine, William F. Koehl, A. Gali, David D. Awschalom

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.

Original languageEnglish
Article number187601
JournalPhysical Review Letters
Volume112
Issue number18
DOIs
Publication statusPublished - May 5 2014

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color centers
silicon carbides
electron spin
spin resonance
Stark effect
interactions
photoluminescence
electric fields
defects
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Falk, A. L., Klimov, P. V., Buckley, B. B., Ivády, V., Abrikosov, I. A., Calusine, G., ... Awschalom, D. D. (2014). Electrically and mechanically tunable electron spins in silicon carbide color centers. Physical Review Letters, 112(18), [187601]. https://doi.org/10.1103/PhysRevLett.112.187601

Electrically and mechanically tunable electron spins in silicon carbide color centers. / Falk, Abram L.; Klimov, Paul V.; Buckley, Bob B.; Ivády, Viktor; Abrikosov, Igor A.; Calusine, Greg; Koehl, William F.; Gali, A.; Awschalom, David D.

In: Physical Review Letters, Vol. 112, No. 18, 187601, 05.05.2014.

Research output: Contribution to journalArticle

Falk, AL, Klimov, PV, Buckley, BB, Ivády, V, Abrikosov, IA, Calusine, G, Koehl, WF, Gali, A & Awschalom, DD 2014, 'Electrically and mechanically tunable electron spins in silicon carbide color centers', Physical Review Letters, vol. 112, no. 18, 187601. https://doi.org/10.1103/PhysRevLett.112.187601
Falk AL, Klimov PV, Buckley BB, Ivády V, Abrikosov IA, Calusine G et al. Electrically and mechanically tunable electron spins in silicon carbide color centers. Physical Review Letters. 2014 May 5;112(18). 187601. https://doi.org/10.1103/PhysRevLett.112.187601
Falk, Abram L. ; Klimov, Paul V. ; Buckley, Bob B. ; Ivády, Viktor ; Abrikosov, Igor A. ; Calusine, Greg ; Koehl, William F. ; Gali, A. ; Awschalom, David D. / Electrically and mechanically tunable electron spins in silicon carbide color centers. In: Physical Review Letters. 2014 ; Vol. 112, No. 18.
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