Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots

N. A. Hastas, D. H. Tassis, C. A. Dimitriadis, L. Dózsa, Franchi, P. Frigeri

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Au/n-GaAs Schottky diodes, containing layers of InAs quantum dots (QDs), are investigated by measuring the forward current-voltage characteristics in the temperature range of 77-300 K and low frequency noise at room temperature. The zero-bias barrier height decreases and the ideality factor increases with decreasing temperature, and the ideality factor was found to follow the T0-effect. The departure from the ideal thermionic-emission diffusion model was interpreted in terms of inhomogeneous Schottky contact with a Gaussian distribution of barrier heights. The excess current at small biases, observed in diodes containing layers of InAs QDs, was attributed to small patches of reduced barrier height. In the diode without QDs, the noise intensity SI shows 1/f behaviour and is proportional to IF 2, which is explained by modulation of the barrier height due to trapping processes in interface states. In diodes containing InAs QDs, SI shows 1/fγ (with γ <1) behaviour and is proportional to IF 2 in the high current range, which is explained by generation of band tail states with exponential energy distribution in the GaAs layer due to the QD formation. In the low current range, SI increases faster than IF 2 due to contribution to the noise of patches of reduced barrier height.

Original languageEnglish
Pages (from-to)461-467
Number of pages7
JournalSemiconductor Science and Technology
Volume19
Issue number3
DOIs
Publication statusPublished - Mar 2004

Fingerprint

Schottky diodes
Semiconductor quantum dots
Diodes
quantum dots
low frequencies
International System of Units
diodes
Thermionic emission
Interface states
thermionic emission
noise intensity
Gaussian distribution
Current voltage characteristics
low currents
normal density functions
Temperature
high current
electric contacts
energy distribution
trapping

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots. / Hastas, N. A.; Tassis, D. H.; Dimitriadis, C. A.; Dózsa, L.; Franchi; Frigeri, P.

In: Semiconductor Science and Technology, Vol. 19, No. 3, 03.2004, p. 461-467.

Research output: Contribution to journalArticle

Hastas, N. A. ; Tassis, D. H. ; Dimitriadis, C. A. ; Dózsa, L. ; Franchi ; Frigeri, P. / Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 3. pp. 461-467.
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