Electrical properties of thin oxidized aluminium films

F. M. Reicha, M. A. El Hiti, P. B. Barna

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thin aluminium films of thickness 40 to 200 nm were deposited on to glass substrates at 573 K in a high vacuum. The deposition was carried out layer by layer and the interfaces between these layers were exposed to oxygen. The electrical resistivity was studied as a function of the film thickness, annealing time, annealing temperature and oxygen pressure. The temperature coefficient of resistivity and the activation energy for the conduction electrons were studied as a function of the film thickness and oxygen pressure. Fuchs-Sondheimer theory for electrical conduction was applied to the experimental results. The mean free path of the conduction electrons was calculated as a function of temperature and agreed well with the theoretical relation.

Original languageEnglish
Pages (from-to)2007-2014
Number of pages8
JournalJournal of Materials Science
Volume26
Issue number8
DOIs
Publication statusPublished - Jan 1 1991

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Electrical properties of thin oxidized aluminium films'. Together they form a unique fingerprint.

  • Cite this