Electrical properties of thin oxidized aluminium films

F. M. Reicha, M. A. El Hiti, P. Barna

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thin aluminium films of thickness 40 to 200 nm were deposited on to glass substrates at 573 K in a high vacuum. The deposition was carried out layer by layer and the interfaces between these layers were exposed to oxygen. The electrical resistivity was studied as a function of the film thickness, annealing time, annealing temperature and oxygen pressure. The temperature coefficient of resistivity and the activation energy for the conduction electrons were studied as a function of the film thickness and oxygen pressure. Fuchs-Sondheimer theory for electrical conduction was applied to the experimental results. The mean free path of the conduction electrons was calculated as a function of temperature and agreed well with the theoretical relation.

Original languageEnglish
Pages (from-to)2007-2014
Number of pages8
JournalJournal of Materials Science
Volume26
Issue number8
DOIs
Publication statusPublished - Jan 1991

Fingerprint

Aluminum
Electric properties
electrical properties
Oxygen
aluminum
conduction electrons
Film thickness
oxygen
film thickness
Annealing
electrical resistivity
annealing
Electrons
high vacuum
mean free path
Temperature
temperature
Activation energy
Vacuum
activation energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

Electrical properties of thin oxidized aluminium films. / Reicha, F. M.; El Hiti, M. A.; Barna, P.

In: Journal of Materials Science, Vol. 26, No. 8, 01.1991, p. 2007-2014.

Research output: Contribution to journalArticle

Reicha, F. M. ; El Hiti, M. A. ; Barna, P. / Electrical properties of thin oxidized aluminium films. In: Journal of Materials Science. 1991 ; Vol. 26, No. 8. pp. 2007-2014.
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