Electrical properties of (Al2O3)x(TiO 2)1-x films deposited on a silicon substrate

P. Vitanov, Z. Alexieva, A. Harizanova, Z. Horvath, L. Dozsa

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Abstract

Direct current conductance in Al/(Al2O3) X(TiO2)1-X/silicon structure was studied, the dielectric layers being deposited by the chemical solution deposition method. The measurements were carried out at room temperature and 320, 340 and 360 K. The results correspond to bulk-limited conduction of the Poole-Frenkel type. High voltages and temperature lead to an additional current rise, explained by thermal excitation and tunneling of electrons through the lowered Poole-Frenkel barrier.

Original languageEnglish
Article number012037
JournalJournal of Physics: Conference Series
Volume113
Issue number1
DOIs
Publication statusPublished - May 1 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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