Electrical properties of (Al2O3)x(TiO 2)1-x films deposited on a silicon substrate

P. Vitanov, Z. Alexieva, A. Harizanova, Z. Horváth, L. Dózsa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Direct current conductance in Al/(Al2O3) X(TiO2)1-X/silicon structure was studied, the dielectric layers being deposited by the chemical solution deposition method. The measurements were carried out at room temperature and 320, 340 and 360 K. The results correspond to bulk-limited conduction of the Poole-Frenkel type. High voltages and temperature lead to an additional current rise, explained by thermal excitation and tunneling of electrons through the lowered Poole-Frenkel barrier.

Original languageEnglish
Article number012037
JournalJournal of Physics: Conference Series
Volume113
Issue number1
DOIs
Publication statusPublished - May 1 2008

Fingerprint

high voltages
direct current
electrical properties
conduction
silicon
room temperature
excitation
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electrical properties of (Al2O3)x(TiO 2)1-x films deposited on a silicon substrate. / Vitanov, P.; Alexieva, Z.; Harizanova, A.; Horváth, Z.; Dózsa, L.

In: Journal of Physics: Conference Series, Vol. 113, No. 1, 012037, 01.05.2008.

Research output: Contribution to journalArticle

@article{237994bf4a954769a7518502859a4fec,
title = "Electrical properties of (Al2O3)x(TiO 2)1-x films deposited on a silicon substrate",
abstract = "Direct current conductance in Al/(Al2O3) X(TiO2)1-X/silicon structure was studied, the dielectric layers being deposited by the chemical solution deposition method. The measurements were carried out at room temperature and 320, 340 and 360 K. The results correspond to bulk-limited conduction of the Poole-Frenkel type. High voltages and temperature lead to an additional current rise, explained by thermal excitation and tunneling of electrons through the lowered Poole-Frenkel barrier.",
author = "P. Vitanov and Z. Alexieva and A. Harizanova and Z. Horv{\'a}th and L. D{\'o}zsa",
year = "2008",
month = "5",
day = "1",
doi = "10.1088/1742-6596/113/1/012037",
language = "English",
volume = "113",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Electrical properties of (Al2O3)x(TiO 2)1-x films deposited on a silicon substrate

AU - Vitanov, P.

AU - Alexieva, Z.

AU - Harizanova, A.

AU - Horváth, Z.

AU - Dózsa, L.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Direct current conductance in Al/(Al2O3) X(TiO2)1-X/silicon structure was studied, the dielectric layers being deposited by the chemical solution deposition method. The measurements were carried out at room temperature and 320, 340 and 360 K. The results correspond to bulk-limited conduction of the Poole-Frenkel type. High voltages and temperature lead to an additional current rise, explained by thermal excitation and tunneling of electrons through the lowered Poole-Frenkel barrier.

AB - Direct current conductance in Al/(Al2O3) X(TiO2)1-X/silicon structure was studied, the dielectric layers being deposited by the chemical solution deposition method. The measurements were carried out at room temperature and 320, 340 and 360 K. The results correspond to bulk-limited conduction of the Poole-Frenkel type. High voltages and temperature lead to an additional current rise, explained by thermal excitation and tunneling of electrons through the lowered Poole-Frenkel barrier.

UR - http://www.scopus.com/inward/record.url?scp=44649178304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44649178304&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/113/1/012037

DO - 10.1088/1742-6596/113/1/012037

M3 - Article

AN - SCOPUS:44649178304

VL - 113

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012037

ER -