Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers

A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, F. Fantini, R. Menozzi, S. Naccarella

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4 Citations (Scopus)


The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/ AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435 °C are studied.

Original languageEnglish
Pages (from-to)820-822
Number of pages3
JournalElectronics Letters
Issue number10
Publication statusPublished - May 12 1994


  • Molecular beam epitaxial growth
  • Schottky-barrier diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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