Electrical peculiarities in GaAs and Si based low dimensional structures

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A brief summary of unusual vertical electrical behaviour obtained in GaAs/InAs/GaAs quantum well and quantum dot structures, Si/Ge/Si and Si/SiGe/Si structures containing nanometer size amorphous thin layers or quantum wells, SiC/Si and Fe2Si/Si structures containing nanocrystals, and porous Si/crystalline Si structures, is presented. The unusual behaviour are connected either with defects (interface, bulk or band tail energy states), or quantum mechanical effects.

Original languageEnglish
Pages (from-to)205-211
Number of pages7
JournalCurrent Applied Physics
Volume6
Issue number2
DOIs
Publication statusPublished - Feb 2006

Fingerprint

Semiconductor quantum wells
quantum wells
Nanocrystals
Electron energy levels
Semiconductor quantum dots
nanocrystals
quantum dots
Crystalline materials
Defects
defects
gallium arsenide
energy
indium arsenide

Keywords

  • Anomalies
  • Electrical behaviour
  • Nanocrystal
  • Porous silicon
  • Quantum dot
  • Quantum well

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science (miscellaneous)

Cite this

Electrical peculiarities in GaAs and Si based low dimensional structures. / Horváth, Z.

In: Current Applied Physics, Vol. 6, No. 2, 02.2006, p. 205-211.

Research output: Contribution to journalArticle

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