Electrical peculiarities in GaAs and Si based low dimensional structures

Research output: Contribution to journalConference article

1 Citation (Scopus)


A brief summary of unusual vertical electrical behaviour obtained in GaAs/InAs/GaAs quantum well and quantum dot structures, Si/Ge/Si and Si/SiGe/Si structures containing nanometer size amorphous thin layers or quantum wells, SiC/Si and Fe2Si/Si structures containing nanocrystals, and porous Si/crystalline Si structures, is presented. The unusual behaviour are connected either with defects (interface, bulk or band tail energy states), or quantum mechanical effects.

Original languageEnglish
Pages (from-to)205-211
Number of pages7
JournalCurrent Applied Physics
Issue number2
Publication statusPublished - Feb 1 2006
EventEngineering Aspects of Nanomaterials and Technologies -
Duration: Jan 24 2005Jan 27 2005



  • Anomalies
  • Electrical behaviour
  • Nanocrystal
  • Porous silicon
  • Quantum dot
  • Quantum well

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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