Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures

Zs J. Horváth, K. Jarrendähl, M. Ádám, I. Szabó, Vo Van Tuyen, Zs Czigány

Research output: Contribution to journalArticle

12 Citations (Scopus)


The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature range of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features.

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - May 8 2002


  • Amorphous
  • Electrical behaviour
  • Schottky barrier
  • Si
  • SiGe
  • Superlattice

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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