Electrical doping of gassensitive, semiconducting Ga2O3 thin films

J. Frank, M. Fleischer, H. Meixner

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Recently polycrystalline n-type semiconducting Ga2O3 thin films have been characterized as a new sensor base material for high-temperature gas sensors. The influences of donator type and acceptor type dopants on the overall conductivity and its gassensitivity of Ga2O3 thin films are investigated. It was found that the change in conductivity of the polycrystalline thin films is significantly smaller than in the case of single crystals reported in the literature. However, an difference in overall conductivity of two orders of magnitude have been found between acceptor and donor doped specimens. There is no effect of the dopants on the bulk controlled oxygen sensitivity. In contrast, a strong influence of the dopants on the surface controlled sensitivity to reducing gases was found. The results are explained by a model.

Original languageEnglish
Pages850-853
Number of pages4
Publication statusPublished - Dec 1 1995
EventProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
Duration: Jun 25 1995Jun 29 1995

Other

OtherProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period6/25/956/29/95

ASJC Scopus subject areas

  • Engineering(all)

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    Frank, J., Fleischer, M., & Meixner, H. (1995). Electrical doping of gassensitive, semiconducting Ga2O3 thin films. 850-853. Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden, .