Recently polycrystalline n-type semiconducting Ga2O3 thin films have been characterized as a new sensor base material for high-temperature gas sensors. The influences of donator type and acceptor type dopants on the overall conductivity and its gassensitivity of Ga2O3 thin films are investigated. It was found that the change in conductivity of the polycrystalline thin films is significantly smaller than in the case of single crystals reported in the literature. However, an difference in overall conductivity of two orders of magnitude have been found between acceptor and donor doped specimens. There is no effect of the dopants on the bulk controlled oxygen sensitivity. In contrast, a strong influence of the dopants on the surface controlled sensitivity to reducing gases was found. The results are explained by a model.
|Number of pages||4|
|Publication status||Published - Dec 1 1995|
|Event||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden|
Duration: Jun 25 1995 → Jun 29 1995
|Other||Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)|
|Period||6/25/95 → 6/29/95|
ASJC Scopus subject areas